FCD7N60 Fairchild Semiconductor, FCD7N60 Datasheet

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FCD7N60

Manufacturer Part Number
FCD7N60
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2008 Fairchild Semiconductor Corporation
FCD7N60/FCU7N60 Rev. A1
FCD7N60 / FCU7N60
600V N-Channel MOSFET
Features
• 650V @T
• Typ. Rds(on)=0.53Ω
• Ultra low gate charge (typ. Qg=23nC)
• Low effective output capacitance (typ. Coss.eff=60pF)
• 100% avalanche tested
• RoHS Compliant
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
T
STG
J
= 150°C
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
G
S
D
D-PAK
FCD Series
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
C
C
= 25°C)
= 100°C)
G
D
S
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
I-PAK
FCU Series
TM
FCD7N60/FCU7N60
is, Fairchild’s proprietary, new generation of high
FCD7N60/FCU7N60
-55 to +150
± 30
0.67
600
230
300
G
4.4
8.3
21
20
83
7
7
1.5
83
SuperFET
D
S
December 2008
www.fairchildsemi.com
to minimize
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FCD7N60 Summary of contents

Page 1

... FCD7N60 / FCU7N60 600V N-Channel MOSFET Features • 650V @T = 150°C J • Typ. Rds(on)=0.53Ω • Ultra low gate charge (typ. Qg=23nC) • Low effective output capacitance (typ. Coss.eff=60pF) • 100% avalanche tested • RoHS Compliant G S Absolute Maximum Ratings Symbol V Drain-Source Voltage ...

Page 2

... ≤ 7A, di/dt ≤ 1200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature FCD7N60/FCU7N60 Rev. A1 Package Reel Size D-PAK 380mm D-PAK 380mm I-PAK - T = 25°C unless otherwise noted C Conditions ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 3000 2000 C oss C 1000 iss C rss Drain-Source Voltage [V] DS FCD7N60/FCU7N60 Rev. A1 Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 1 ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FCD7N60/FCU7N60 Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : µ 250 A 0.5 D 0.0 100 150 200 -100 o C] Figure 10 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FCD7N60/FCU7N60 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FCD7N60/FCU7N60 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FCD7N60/FCU7N60 Rev. A1 D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Package Dimensions FCD7N60/FCU7N60 Rev. A1 (Continued) I-PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCD7N60/FCU7N60 Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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