FCD7N60 Fairchild Semiconductor, FCD7N60 Datasheet - Page 3

• Manufacturer Part Number: FCD7N60
• Manufacturer: Fairchild Semiconductor

FCD7N60/FCU7N60 Rev. A1
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
3000
2000
1000
Figure 3. On-Resistance Variation vs.
10
10
10
Figure 1. On-Region Characteristics
-1
1
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
0
10
-1
Drain Current and Gate Voltage
0
-1
Top :
Bottom :
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
5
V
C
V
rss
DS
C
DS
, Drain-Source Voltage [V]
iss
C
, Drain-Source Voltage [V]
oss
10
10
I
D
0
, Drain Current [A]
0
10
V
GS
= 10V
C
C
C
iss
oss
rss
* Notes :
= C
= C
= C
10
10
1. 250
2. T
15
gs
gd
* Note : T
ds
1
1
V
+ C
C
+ C
GS
= 25
µ
gd
s Pulse Test
gd
* Notes :
= 20V
(C
1. V
2. f = 1 MHz
o
C
J
ds
= 25
= shorted)
GS
= 0 V
o
C
20
3
10
12
10
10
10
10
10
10
8
6
4
2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
-1
Figure 6. Gate Charge Characteristics
-1
1
0
0
1
0
0.2
2
Variation vs. Source Current
0.4
5
150
4
o
C
and Temperatue
V
V
0.6
Q
SD
GS
25
G
, Total Gate Charge [
, Source-Drain Voltage [V]
o
, Gate-Source Voltage [V]
150
C
25
o
10
C
o
V
C
0.8
DS
V
DS
= 400V
V
DS
= 250V
6
= 100V
1.0
-55
15
o
C
o
C]
* Note
* Notes :
1.2
1. V
2. 250
1. V
2. 250
* Note : I
8
DS
GS
µ
= 40V
20
µ
= 0V
s Pulse Test
s Pulse Test
www.fairchildsemi.com
D
= 7A
1.4
10
1.6
25