FQN1N50C Fairchild Semiconductor, FQN1N50C Datasheet
FQN1N50C
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FQN1N50C Summary of contents
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... R Thermal Resistance, Junction-to-Lead θJL R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FQN1N50C Rev. A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... JL b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment (R is the sum of the junction-to-case and case-to-ambient thermal resistance. R θ JA FQN1N50C Rev. A Package Reel Size TO- 25°C unless otherwise noted C Test Conditions = 250 µ ...
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... Drain Current [A] D Figure 5. Capacitance Characteristics 400 300 C oss C iss 200 C 100 rss Drain-Source Voltage [V] DS FQN1N50C Rev. A Figure 2. Transfer Characteristics 0 10 Notes : ※ 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage V = 10V ...
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... Single Pulse - Drain-Source Voltage [ FQN1N50C Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 -100 100 150 200 o C] Figure 10. Maximum Drain Current ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FQN1N50C Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms FQN1N50C Rev www.fairchildsemi.com ...
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... Mechanical Dimensions ±0.10 0.46 1.27TYP ±0.20 [1.27 FQN1N50C Rev. A TO-92 +0.25 4.58 –0.15 1.27TYP ±0.20 ] [1.27 ] 3.60 ±0.20 (R2.29) 7 +0.10 0.38 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...