FQN1N50C Fairchild Semiconductor, FQN1N50C Datasheet - Page 2

• Manufacturer Part Number: FQN1N50C
• Manufacturer: Fairchild Semiconductor

FQN1N50C Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 80mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. a) Reference point of the R
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
FS
GS(th)
DS(on)
iss
oss
rss
SD
SD
g
gs
gd
rr
Device Marking
J
Symbol
DSS
(R
≤ 0.38A, di/dt ≤ 200A/µs, V
DSS
θ
JA
1N50C
/
is the sum of the junction-to-case and case-to-ambient thermal resistance. R
AS
= 1.0A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
θ
= 50V, R
JL
DD
is the drain lead
≤ BV
FQN1N50C
G
Device
Parameter
= 25 Ω, Starting T
DSS,
Starting T
J
T
C
= 25°C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-92
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 500 V, V
= 400 V, T
= V
= 40 V, I
= 25 V, V
= 400 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 250 V, I
= 10 V
= 0 V, I
= 0 V, I
GS
2
Test Conditions
θ
, I
CA
D
S
S
D
D
D
= 0.38 A
= 1.0 A,
= 250 µA
GS
is determined by the user’s board design)
DS
D
D
DS
= 250 µA
= 0.19A
C
= 0.19 A
GS
= 1.0 A,
= 1.0 A,
Reel Size
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
--
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
500
2.0
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Typ.
0.66
0.55
150
188
0.5
4.6
0.6
4.1
4.9
2.9
28
10
10
20
15
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Max.
-100
0.38
3.04
250
100
195
4.0
6.0
6.4
1.4
50
40
30
30
50
40
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Quantity
www.fairchildsemi.com
2000ea
Units
V/°C
µA
µA
nA
nA
pF
pF
pF
nC
nC
nC
µC
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V