FQB34P10 Fairchild Semiconductor, FQB34P10 Datasheet - Page 3

• Manufacturer Part Number: FQB34P10
• Description: These P-Channel enhancement mode power field effect transistors are produced using Fairchild
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
10
10
10
500
-1
-2
2
1
0
10
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
10
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : -4.5 V
Figure 3. On-Resistance Variation vs.
-1
0
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
V
25
GS
-V
50
C
C
C
V
oss
iss
rss
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
-I
75
D
0
0
, Drain Current [A]
V
V
GS
GS
100
= - 20V
= - 10V
※
125
1. 250µ s Pulse Test
2. T
Note :
C
C
C
C
iss
oss
rss
= 25 ℃
= C
= C
= C
10
※
150
gs
ds
gd
10
1
+ C
Note : T
+ C
1
gd
gd
※
(C
1. V
2. f = 1 MHz
Notes :
ds
J
= 25 ℃
175
= shorted)
GS
= 0 V
200
10
10
10
10
10
12
10
10
10
10
8
6
4
2
0
-1
2
1
0
-1
2
1
0
0
0.0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25 ℃
175 ℃
Figure 2. Transfer Characteristics
175 ℃
0.5
Variation vs. Source Current
20
25 ℃
4
-V
-V
-55 ℃
Q
SD
GS
and Temperature
G
1.0
V
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
DS
V
= -80V
DS
40
= -50V
V
DS
= -20V
1.5
6
60
2.0
※
※
※
1. V
2. 250µ s Pulse Test
1. V
2. 250µs Pulse Test
Notes :
Notes :
8
Note : I
DS
G S
= -40V
80
= 0V
D
2.5
= -33.5 A
100
3.0
10
Rev. B, June 2004