FQB34P10 Fairchild Semiconductor, FQB34P10 Datasheet - Page 4

• Manufacturer Part Number: FQB34P10
• Description: These P-Channel enhancement mode power field effect transistors are produced using Fairchild
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
-1
Figure 9. Maximum Safe Operating Area
2
1
0
10
1.2
1.1
1.0
0.9
0.8
Figure 7. Breakdown Voltage Variation
-100
0
Operation in This Area
is Limited by R
-50
-V
vs. Temperature
T
DS
J
DS(on)
, Junction Temperature [
, Drain-Source Voltage [V]
※
0
1. T
2. T
3. Single Pulse
Notes :
C
J
= 175
= 25
10
1
o
C
o
1 0
1 0
C
1 0
50
-1
-2
0
1 0
DC
-5
0 .0 5
0 .0 2
0 .0 1
Figure 11. Transient Thermal Response Curve
D = 0 .5
0 .2
0 .1
10 ms
(Continued)
100
1 ms
o
C]
1 0
※
100 s
1. V
2. I
Notes :
-4
sin g le p u ls e
D
GS
= -250 µA
= 0 V
150
t
10
1
, S q u a re W a v e P u lse D u ra tio n [se c ]
2
1 0
200
-3
1 0
-2
40
35
30
25
20
15
10
5
0
25
2.5
2.0
1.5
1.0
0.5
0.0
-100
※
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1. Z
2. D u ty F a cto r, D = t
3. T
P
-1
N ote s :
DM
θ J C
JM
50
- T
(t) = 0 .97
-50
C
= P
vs. Case Temperature
t
DM
1
T
vs. Temperature
1 0
t
T
75
C
℃
* Z
2
, Case Temperature [ ]
J
0
, Junction Temperature [
/W M a x.
1
θ JC
/t
0
2
(t)
100
50
1 0
1
125
℃
100
o
C]
※
1. V
2. I
150
Notes :
150
D
G S
= -16.75 A
= -10 V
175
200
Rev. B, June 2004