FQB19N20C Fairchild Semiconductor, FQB19N20C Datasheet - Page 2
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FQB19N20C
Manufacturer Part Number
FQB19N20C
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQB19N20C.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQB19N20C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQB19N20CTM
Manufacturer:
FSC
Quantity:
12 000
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.8mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ 19.0A, di/dt ≤ 300A/µs, V
DSS
∆T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 19.0A, V
DD
= 50V, R
DD
Parameter
≤ BV
G
DSS,
= 25 Ω, Starting T
Starting T
J
= 25°C
T
C
J
= 25°C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
/ dt = 100 A/µs
= 25 Ω
= 200 V, V
= 160 V, T
= V
= 40 V, I
= 25 V, V
= 160 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 100 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
D
D
= 250 µA
= 19.0 A
= 19.0 A,
GS
DS
D
D
= 250 µA
DS
= 9.5 A
GS
C
= 9.5 A
= 19.0 A,
= 19.0 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
200
2.0
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0.24
0.14
10.8
40.5
22.5
1.63
Typ
830
195
150
135
208
115
6.0
85
15
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1080
-100
19.0
Max
0.17
53.0
76.0
100
100
255
110
310
280
240
4.0
1.5
10
40
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Rev. A1, Oct 2008
Units
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V