FQB19N20C Fairchild Semiconductor, FQB19N20C Datasheet - Page 3

• Manufacturer Part Number: FQB19N20C
• Manufacturer: Fairchild Semiconductor

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
500
10
10
0.8
0.6
0.4
0.2
0.0
0
10
1
0
10
-1
Figure 5. Capacitance Characteristics
0
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom : 4.5 V
※
Figure 1. On-Region Characteristics
1. V
2. f = 1 MHz
Notes :
Drain Current and Gate Voltage
GS
15.0 V
10.0 V
= 0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
20
10
10
I
D
0
0
, Drain Current [A]
C
C
C
oss
rss
iss
V
30
GS
= 10V
C
C
C
40
iss
oss
rss
※
= C
= C
= C
1. 250µ s Pulse Test
2. T
10
Notes :
10
gs
gd
ds
1
C
1
※
+ C
+ C
= 25 ℃
Note : T
gd
gd
(C
50
V
ds
GS
= shorted)
J
= 25 ℃
= 20V
60
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
o
C
Variation with Source Current
150
0.4
10
o
150 ℃
C
4
V
V
Q
GS
25 ℃
SD
and Temperature
G
V
0.8
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
DS
V
= 160V
DS
20
-55
= 100V
V
o
DS
C
= 40V
1.2
6
30
1.6
※
1. V
2. 250µ s Pulse Test
Notes :
※
DS
1. V
2. 250µ s Pulse Test
Notes :
8
※
= 40V
GS
Note : I
40
= 0V
2.0
D
= 19.0A
10
2.4
Rev. A1, Oct 2008
50