FQD1N60C Fairchild Semiconductor, FQD1N60C Datasheet - Page 3

• Manufacturer Part Number: FQD1N60C
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
250
200
150
100
10
10
50
10
0
10
30
25
20
15
10
-1
-2
0
10
5
0
0.0
-1
Figure 5. Capacitance Characteristics
-1
Top :
Bottom : 4.5 V
Figure 3. On-Resistance Variation vs
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
0.5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
D
0
0
, Drain Current [A]
1.0
C
C
C
oss
V
iss
rss
GS
= 10V
1.5
C
C
C
iss
oss
rss
= C
V
= C
10
10
= C
GS
※ Note : T
※ Notes :
1
1
gs
gd
ds
1. 250 μ s Pulse Test
2. T
= 20V
+ C
+ C
2.0
C
gd
gd
= 25 ℃
(C
※ Notes ;
1. V
2. f = 1 MHz
J
ds
= 25 ℃
= shorted)
GS
= 0 V
2.5
10
12
10
10
10
8
6
4
2
0
10
-1
0
0
-1
2
0.2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
o
C
Variation with Source Current
1
0.4
150
V
SD
o
C
V
, Source-Drain voltage [V]
4
DS
V
DS
Q
V
150 ℃
= 120V
and Temperature
GS
= 300V
G
2
0.6
V
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
DS
= 480V
25 ℃
-55
0.8
3
o
6
C
※ Note : I
D
※ Notes :
= 1A
1.0
4
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250 μ s Pulse Test
DS
GS
8
= 40V
= 0V
1.2
5
Rev. A1, January 2009
1.4
6
10