FQD1N60C Fairchild Semiconductor, FQD1N60C Datasheet - Page 4

• Manufacturer Part Number: FQD1N60C
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
-2
1
0
Figure 7. Breakdown Voltage Variation
10
0
-50
Operation in This Area
is Limited by R
T
V
vs Temperature
J
, Junction Temperature [
DS
1 0
10
0
1 0
, Drain-Source Voltage [V]
1
- 1
0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
DS(on)
- 5
C
J
= 150
= 25
D = 0 . 5
0 . 0 2
0 . 0 5
0 . 0 1
0 . 1
0 . 2
50
o
C
o
C
Figure 11. Transient Thermal Response Curve
DC
s in g le p u ls e
1 0
100 ms
(Continued)
100
10
2
- 4
o
C]
10 ms
※ Notes :
1. V
2. I
t
1 ms
1
D
, S q u a re W a v e P u ls e D u r a tio n [s e c ]
G S
= 250 μ A
= 0 V
150
100 s
1 0
- 3
10
200
3
1 0
- 2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o te s :
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r, D = t
3 . T
Figure 8. On-Resistance Variation
- 1
P
θ J C
J M
DM
- T
( t) = 4 .5 3 ℃ /W M a x .
-50
C
50
= P
vs Case Temperature
D M
t
1
t
T
* Z
2
1 0
T
J
vs Temperature
, Junction Temperature [
C
1
0
, Case Temperature [ ℃ ]
θ J C
0
/ t
2
75
( t)
50
1 0
100
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 0.5 A
= 10 V
Rev. A1, January 2009
150
200