FQB6N80 Fairchild Semiconductor, FQB6N80 Datasheet
FQB6N80
Available stocks
Related parts for FQB6N80
FQB6N80 Summary of contents
Page 1
... A = 25°C) C Parameter October 2008 QFET = 1. DS(on " " " " " " FQB6N80 / FQI6N80 Units 800 V 5.8 A 3. 680 mJ 5.8 A 15.8 mJ 4.0 V/ns 3.13 W 158 W 1.27 W/°C -55 to +150 °C 300 °C Typ Max ...
Page 2
... ≤ 5.8A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2008 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...
Page 3
... C iss 1400 1200 1000 C oss 800 600 C rss 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International ※ Notes : 1. 250μ s Pulse Test 25℃ 10V ※ Note : T = 25℃ ...
Page 4
... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...
Page 5
... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...
Page 6
... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type ...
Page 7
... Mechanical Dimensions ©2000 Fairchild Semiconductor International PAK Dimensions in Millimeters Rev. A1, Oct 2008 ...
Page 8
... Mechanical Dimensions ©2008 Fairchild Semiconductor International PAK Dimensions in Millimeters Rev. A1, Oct 2008 ...
Page 9
... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQB6N80 / FQI6N80 Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...