FQB6N80 Fairchild Semiconductor, FQB6N80 Datasheet - Page 4

• Manufacturer Part Number: FQB6N80
• Manufacturer: Fairchild Semiconductor

©2008 Fairchild Semiconductor International
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
10
J
vs Temperature
DS
, Junction Temperature [
1
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
0
1 0
C
J
= 150
= 25
- 5
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
0 .2
0 .1
DS(on)
o
50
C
o
C
DC
10
10 ms
Figure 11. Transient Thermal Response Curve
2
100
1 0
(Continued)
1 ms
o
- 4
C]
s i n g le p u ls e
100μ s
※ Notes :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
10μ s
= 250 μ A
150
= 0 V
10
3
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r , D = t
3 . T
1 0
Figure 10. Maximum Drain Current
- 1
P
θ J C
J M
-50
DM
- T
( t) = 0 .7 9 ℃ / W M a x .
50
C
= P
vs Case Temperature
T
J
T
D M
t
vs Temperature
, Junction Temperature [
1
C
t
1 0
0
, Case Temperature [ ℃ ]
2
* Z
0
1
/t
θ J C
75
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 2.9 A
= 10 V
Rev. A1, Oct 2008
200
150