ND261N Infineon Technologies, ND261N Datasheet - Page 6

• Manufacturer Part Number: ND261N
• Manufacturer: Infineon Technologies

Specifications of ND261N

• Vdrm/ Vrrm (v): 2,000.0 - 2,600.0 V
• Ifsm (max): 8,300.0 A
• Ifavm/tc: 260/100 (180° el sin)
• Housing: PowerBLOCK 50 mm
• Features: Rectifier Diode

BIP AC / 87-08-21, K.Spec
N
Rectifier Diode Module
160
140
120
100
400
300
200
100
Netz-Dioden-Modul
80
60
40
20
Diagramme
0
0
0
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature T
Durchlassverlustleistung je Zweig / On-state power loss per arm P
Calculation base P
Berechungsgrundlage P
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
100
100
Parameter: Stromflußwinkel / Current conduction angle Θ
Datenblatt / Data sheet
Strombelastung je Zweig / Current load per arm
Durchgangsverluste
Gehäusetemperatur
Θ = 60 ° rec
TAV
Θ = 60 ° rec
(switching losses should be considered separately)
A20/87
TAV
ND261N
Diagramme
(Schaltverluste gesondert berücksichtigen)
200
200
120 ° rec
120 ° rec
I
FAVM
I
180 ° sin
FAV
[A]
180 ° sin
[A]
180 ° rec
180 ° rec
300
300
FAV
= f(I
C
FAV
= f(I
)
Seite/page
FAVM
DC
)
400
400
DC
6/9