T580N Infineon Technologies, T580N Datasheet - Page 8

• Manufacturer Part Number: T580N
• Manufacturer: Infineon Technologies

Specifications of T580N

• Vdrm/ Vrrm (v): 200.0 - 600.0 V
• Itsm: 5,500.0 A
• Itavm: 568 (180 ° el sin)
• Housing: Disc dia 42mm height 14mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2009-11-30, H.Sandmann
N
Phase Control Thyristor
100
10000
0,1
10
1000
1
100
Netz-Thyristor
1
1
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
a - 40W / 10ms
10
Steuercharakteristik v
Gate characteristic v
Sperrverzögerungsladung / Recovered charge Q
Datenblatt / Data sheet
Parameter: Durchlassstrom / On-state current i
T
vj
b - 80W / 1ms
= T
Steuerkennlinie
vjmax
Zündverzug
100
G
, v
G
= f (i
= f (i
R
T580N
≤ 0,5 V
G
A 27/09
G
i
) with triggering area for V
G
) mit Zündbereichen für V
c - 100W / 0,5ms
[mA]
RRM
10
, V
RM
= 0,8 V
1000
RRM
d – 150W / 0,1ms
r
= f(di/dt)
TM
D
D
= 12 V
= 12 V
-di/dt [A/µs]
10000
a
b
Seite/page
GM
c
d
= f (t
i
TM
g
) :
= 1000A
500A
100A
200A
50A
20A
10A
100000
8/10
100