BTS5012-1EKB Infineon Technologies, BTS5012-1EKB Datasheet - Page 15
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BTS5012-1EKB
Manufacturer Part Number
BTS5012-1EKB
Description
Manufacturer
Infineon Technologies
Datasheet
1.BTS5012-1EKB.pdf
(53 pages)
Specifications of BTS5012-1EKB
Packages
PG-DSO-14
Channels
1.0
Ron @ Tj = 25°c
12.0 mOhm
Recommended Operating Voltage Min.
5.0 V
Recommended Operating Voltage Max.
28.0 V
Il(sc)
50.0 A
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5
The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
The ON-state resistance
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in
Figure 8
A high signal at the input pin (see
is optimized in terms of EMC emission.
5.2
Figure 9
Figure 9
Data Sheet
PROFET™+ 12V
20
15
10
5
0
-40
shows the typical timing when switching a resistive load.
Power Stage
Output ON-state Resistance
Typical ON-state Resistance
Turn ON/OFF Characteristics with Resistive Load
Switching a Resistive Load Timing
-10
90% V
70% V
30% V
10% V
V
V
IN_H
IN_L
S
S
S
S
V
OUT
IN
20
Junction Temperature (Tj)
R
DS(ON)
t
ON_DELAY
50
t
ON
depends on the supply voltage as well as the junction temperature
Chapter
80
8) causes the power DMOS to switch ON with a dedicated slope, which
Chapter
110
dV/dt
ON
6.4.
140
15
t
OFF_DELAY
50
40
30
20
10
0
t
OFF
0
dV/dt
OFF
3
6
Supply Voltage V
Switching times .vsd
9
Rev. 2.0, 2012-04-17
BTS5012-1EKB
S
t
t
(V)
12
Rdson_12.vsd
Power Stage
T
J
15
.
Figure 8
18