BTS410-E2 Infineon Technologies, BTS410-E2 Datasheet - Page 6

• Manufacturer Part Number: BTS410-E2
• Manufacturer: Infineon Technologies

Specifications of BTS410-E2

• Packages: P-TO220-5
• Channels: 1.0
• Ron @ Tj = 25°c: 220.0 mOhm
• Recommended Operating Voltage Min.: 4.7 V
• Recommended Operating Voltage Max.: 42.0 V
• Il(sc): 5.0 A

Truth Table
L = "Low" Level
H = "High" Level
Terms
13
14
15
Semiconductor Group
Normal
operation
Open load
Short circuit
to GND
Short circuit
to V
Overtem-
perature
Under-
voltage
Overvoltage
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
) Low resistance short V
) No current sink capability during undervoltage shutdown
V
bb
open load detection.
bb
V
IN
I IN
V ST
I ST
2
4
Input-
level
IN
ST
H
H
H
H
H
H
H
L
L
L
L
L
L
L
R
X = don't care
GND
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
PROFET
GND
bb
3
1
V
Output
bb
level
I bb
to output may be detected in ON-state by the no-load-detection
13 )
I GND
H
H
H
H
L
L
L
L
L
L
L
L
L
OUT
5
I L
412
L
L
B2
H
H
H
H
H
L
L
L
L
L
15)
15)
L
L
Z = high impedance, potential depends on external circuit
V OUT
V ON
Status
H (L
410
L
L
D2
H
H
H
H
H
15)
15)
L
L
L
L
L
L
6
14)
Input circuit (ESD protection)
ZD
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
)
I1
H (L
E2/F2
6 V typ., ESD zener diodes are not to be used as
410
H
H
H
H
H
H
H
H
H
L
L
L
L
14)
)
IN
H (L
ZD
410
G2
H
H
H
H
H
H
H
H
H
H
ESD-
L
L
L
R
I1
14)
I
ZD
)
I2
GND
410
H2
H
H
H
H
H
H
H
H
H
L
L
L
L
L
I
I
BTS 410 E2
2003-Oct-01