BTS410-E2 Infineon Technologies, BTS410-E2 Datasheet - Page 8

• Manufacturer Part Number: BTS410-E2
• Manufacturer: Infineon Technologies

Specifications of BTS410-E2

• Packages: P-TO220-5
• Channels: 1.0
• Ron @ Tj = 25°c: 220.0 mOhm
• Recommended Operating Voltage Min.: 4.7 V
• Recommended Operating Voltage Max.: 42.0 V
• Il(sc): 5.0 A

GND disconnect with GND pull up
Any kind of load. If V
Due to V
V
load
Normal load current can be handled by the PROFET
itself.
V
inductive load
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Semiconductor Group
V
bb
bb
bb
high
V
V
bb
bb
disconnect with energized inductive
disconnect with charged external
GND
high
2
4
>0, no V
V
IN
ST
S
IN
V
2
2
4
GND >
4
ST
ST
PROFET
IN
ST
IN
ST
GND
= low signal available.
3
1
V
bb
V
IN
PROFET
- V
PROFET
GND
GND
3
3
1
1
V
IN(T+)
V
OUT
bb
bb
V
GND
device stays off
5
OUT
OUT
5
5
D
8
Inductive Load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R
Maximum allowable load inductance for
a single switch off
L = f (I
L [mH]
V
=
bb
10000
1000
E
= 12 V, R
100
AS
10
L
1
E
); T
=
bb
E
1
2
I
AS
L
·
j,start
·
R
= E
L
L
L
·
(
= 0
V
bb
= 150°C,T
IN
ST
bb
2
+ E
+ |V
E
L
PROFET
L
OUT(CL)
- E
GND
=
V
bb
1 /
C
3
R
2
= V
= 150°C const.,
·
L
|)
·
I
·
OUT
2
L
ON(CL)
ln
L
4
(1+
E AS
Z L
0 :
BTS 410 E2
·
{
i
|V
2003-Oct-01
L
(t) dt,
R L
OUT(CL)
L
I
L
·
5
R
L
E
I L [A]
E
|
E Load
R
)
L
6