BSD316SN Infineon Technologies, BSD316SN Datasheet
BSD316SN
Specifications of BSD316SN
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BSD316SN Summary of contents
Page 1
... /dt di /dt =200 A/µs, =150 °C T j,max V GS =25 ° tot stg JESD22-A114 -HBM page 1 BSD316SN 30 DS =10 V 160 V DS(on),max GS =4.5 V 280 V GS 1.4 PG-SOT363 Marking Lead Free Packing X7s Yes Non dry Value 1 ...
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... =150 ° = GSS DS( |>2 DS(on)max page 2 BSD316SN Values Unit min. typ. max 250 K 1.2 1.6 2.0 μ 100 - - 100 nA - 192 280 mΩ - 120 160 , - 2.3 - ...
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... plateau I S =25 ° S,pulse = =1 =25 ° = =1 /dt =100 A/µ page 3 BSD316SN Values Unit min. typ. max 3.4 - ...
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... T [° Max. transient thermal impedance =f(t Z thJA parameter µs 10 µs 100 µ [V] DS page 4 BSD316SN ≥ 100 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - ...
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... V 150 100 2 [ Typ. forward transconductance =f 150 °C 25 ° [V] GS page 5 BSD316SN ); T =25 ° 3 4 [A] D =25 ° [ 2011-07-14 ...
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... Forward characteristics of reverse diode =25°C =f parameter Ciss Coss Crss - [V] DS page 6 BSD316SN ); =3.7 µ typ 100 140 T [° °C 150 °C 150 °C, 98% 25 °C, 98% 0.4 0.8 1.2 ...
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... °C 5 100 °C 4 125 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSD316SN ); I =1.4 A pulsed 0.25 0.5 0.75 Q [nC] gate ate 2011-07-14 ...
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... Package Outline: Footprint: Reflow soldering: Rev 2.3 SOT363 Packing: page 8 BSD316SN 2011-07-14 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 9 BSD316SN 2011-07-14 ...