BSD316SN Infineon Technologies, BSD316SN Datasheet

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BSD316SN

Manufacturer Part Number
BSD316SN
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSD316SN

Package
SOT-363
Vds (max)
30.0 V
Rds (on) (max) (@10v)
160.0 mOhm
Rds (on) (max) (@4.5v)
280.0 mOhm
Rds (on) (max) (@2.5v)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSD316SN
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSD316SNL6327
Manufacturer:
Infineon
Quantity:
2 400
Rev 2.3
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSD316SN
2 Small-Signal-Transistor
Package
PG-SOT363 L6327: 3000 pcs/ reel
j
=25 °C, unless otherwise specified
Tape and Reel Information
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
JESD22-A114 -HBM
page 1
A
A
A
j,max
A
=1.4 A, R
=1.4 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
GS
=16 V,
=25 Ω
V
R
I
Product Summary
D
DS
DS(on),max
Marking
X7s
V
V
Lead Free
Yes
GS
GS
-55 ... 150
0 (<250V)
55/150/56
=10 V
=4.5 V
260 °C
Value
±20
PG-SOT363
1.4
1.1
5.6
3.7
0.5
6
1
2
Packing
Non dry
6
3
BSD316SN
160
280
1.4
30
5 4
Unit
A
mJ
kV/µs
V
W
°C
V
A
2011-07-14

Related parts for BSD316SN

BSD316SN Summary of contents

Page 1

... /dt di /dt =200 A/µs, =150 °C T j,max V GS =25 ° tot stg JESD22-A114 -HBM page 1 BSD316SN 30 DS =10 V 160 V DS(on),max GS =4.5 V 280 V GS 1.4 PG-SOT363 Marking Lead Free Packing X7s Yes Non dry Value 1 ...

Page 2

... =150 ° = GSS DS( |>2 DS(on)max page 2 BSD316SN Values Unit min. typ. max 250 K 1.2 1.6 2.0 μ 100 - - 100 nA - 192 280 mΩ - 120 160 , - 2.3 - ...

Page 3

... plateau I S =25 ° S,pulse = =1 =25 ° = =1 /dt =100 A/µ page 3 BSD316SN Values Unit min. typ. max 3.4 - ...

Page 4

... T [° Max. transient thermal impedance =f(t Z thJA parameter µs 10 µs 100 µ [V] DS page 4 BSD316SN ≥ 100 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - ...

Page 5

... V 150 100 2 [ Typ. forward transconductance =f 150 °C 25 ° [V] GS page 5 BSD316SN ); T =25 ° 3 4 [A] D =25 ° [ 2011-07-14 ...

Page 6

... Forward characteristics of reverse diode =25°C =f parameter Ciss Coss Crss - [V] DS page 6 BSD316SN ); =3.7 µ typ 100 140 T [° °C 150 °C 150 °C, 98% 25 °C, 98% 0.4 0.8 1.2 ...

Page 7

... °C 5 100 °C 4 125 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSD316SN ); I =1.4 A pulsed 0.25 0.5 0.75 Q [nC] gate ate 2011-07-14 ...

Page 8

... Package Outline: Footprint: Reflow soldering: Rev 2.3 SOT363 Packing: page 8 BSD316SN 2011-07-14 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 9 BSD316SN 2011-07-14 ...

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