BSD840N Infineon Technologies, BSD840N Datasheet - Page 3

• Manufacturer Part Number: BSD840N
• Manufacturer: Infineon Technologies

Specifications of BSD840N

• Package: SOT-363 dual
• Vds (max): 20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): 400.0 mOhm

Rev 2.3
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
DD
GS
GS
R
=0.88 A, R
=25 °C
F
=25 °C
=10 V, I
/dt =100 A/µs
=0 V, V
=10 V, V
=10 V, I
=0 to 2.5 V
=0 V, I
F
F
DS
=0.88 A,
=0.88 A,
D
GS
G
=0.88 A,
=10 V,
=6 Ω
=2.5 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.10
0.10
0.26
0.94
0.82
typ.
3.5
1.9
2.2
7.8
0.9
1.7
5.3
55
25
-
-
max.
0.5
3.5
1.1
78
36
-
-
-
-
-
-
-
-
-
-
-
BSD840N
Unit
pF
ns
nC
V
A
V
ns
nC
2011-07-14