BSS84PW H6327 Infineon Technologies, BSS84PW H6327 Datasheet

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BSS84PW H6327

Manufacturer Part Number
BSS84PW H6327
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSS84PW H6327

Package
SOT-323
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
-
Rds (on) (max) (@4.5v)
8,000.0 mOhm
Rds (on) (max) (@2.5v)
12,000.0 mOhm
SIPMOS
Features
·
·
·
·
·
Type
BSS84PW
Maximum Ratings,at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
JESF22-A114-HBM
ESD Class
D
S
Rev 1.5
Enhancement mode
A
A
jmax
A
P-Channel
Avalanche rated
Logic Level
d v /d t rated
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21
= -0.15 A, V
= -0.15 A , V
= 25 °C
= 25 °C
= 25 °C
= 150 °C
Small-Signal-Transistor
DS
DD
= -48 V, d i /d t = 200 A/µs,
= -25 V, R
Package
PG-SOT-323 H6327:3000pcs/r.
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
Tape and Reel
W
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
j ,
AS
AR
GS
tot
T
Marking
YBs
stg
Pin 1
-55...+150
55/150/56
G
V
R
I
Class 0
Value
D
-0.15
DS
2.61
0.03
DS(on)
-0.6
±20
0.3
6
3
PIN 2
S
BSS84PW
2011-07-13
-0.15
-60
8
1
Unit
A
mJ
kV/µs
V
W
°C
PIN 3
VSO05561
D
V
W
A
2

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BSS84PW H6327 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · Logic Level · rated Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package PG-SOT-323 H6327:3000pcs/r. BSS84PW Maximum Ratings, °C, ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

Page 4

Power Dissipation tot A BSS84PW 0.32 W 0.24 0.20 0.16 0.12 0.08 0.04 0. Safe operating area parameter : D = ...

Page 5

Typ. output characteristic =25° parameter µs p BSS84PW -0. tot -0.28 -0.24 -0.20 -0.16 -0.12 -0.08 -0.04 0.00 0.0 -0.5 ...

Page 6

Drain-source on-resistance DS(on) parameter -0.17A max -60 - Typ. capacitances Parameter ...

Page 7

Avalanche energy par -0. - 3.0 mJ 2.0 1.5 1.0 0.5 0 Drain-source breakdown voltage ...

Page 8

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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