BF1009SR Infineon Technologies, BF1009SR Datasheet

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BF1009SR

Manufacturer Part Number
BF1009SR
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BF1009SR

Packages
SOT143-4-1
Id (max)
25.0 mA
Ptot (max)
200.0 mW
Gfs (typ)
30.0 mS
Gp (typ)
22.0 dB
F (typ)
1.4 dB

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF1009SR
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BF1009SRE6327
Manufacturer:
SIL
Quantity:
4 984
Part Number:
BF1009SRE6327
Manufacturer:
INFINEON
Quantity:
8 000
Company:
Part Number:
BF1009SRE6327
Quantity:
173 860
Company:
Part Number:
BF1009SRE6327
Quantity:
30 000
Silicon N-Channel MOSFET Tetrode
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF1009S
BF1009SR
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
Storage temperature
Channel temperature
1
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Pb-containing package may be available upon special request
S
For low noise, high gain controlled
Operating voltage 9 V
Integrated biasing network
Pb-free (RoHS compliant) package
Qualified according AEC Q101
input stage up to 1 GHz
AGC
Input
76 °C, BF1009S, BF1009SR
RF
G2
G1
Package
SOT143
SOT143R
GND
Drain
1=S
1=D
RF Output
+ DC
1)
2=D
2=S
1
Pin Configuration
3=G2
3=G1
Symbol
V
I
+V
P
T
T
D
I
stg
ch
DS
tot
G1/2SM
G1SE
4=G1
4=G2
-
-
-55 ... 150
Value
200
150
12
25
10
3
-
-
BF1009S...
2007-04-20
Marking
JLs
JLs
Unit
V
mA
V
mW
°C

Related parts for BF1009SR

BF1009SR Summary of contents

Page 1

... Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation T 76 °C, BF1009S, BF1009SR S Storage temperature Channel temperature 1 Pb-containing package may be available upon special request Note not recommended to apply external DC-voltage on Gate 1 in active mode. ...

Page 2

... Thermal Resistance Parameter 1) Channel - soldering point BF1009S, BF1009SR Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage I = 500 µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2 source breakdown voltage mA G2S G1S Gate1-source leakage current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Forward transconductance G2S Gate1 input capacitance MHz DS G2S ...

Page 4

... Total power dissipation P BF1009S, BF1009SR 220 mW 180 160 140 120 100 Insertion power gain |S |² 200 MHz 21 G2S -15 -25 -35 -45 -55 - Drain current I tot 105 120 °C ...

Page 5

Gate 1 input capacitance 200 MHz 3 pF 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Output capacitance C g1ss g2s f = 200 MHz ...

Page 6

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...

Page 7

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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