SIGC104T170R2C Infineon Technologies, SIGC104T170R2C Datasheet - Page 2

• Manufacturer Part Number: SIGC104T170R2C
• Manufacturer: Infineon Technologies

Specifications of SIGC104T170R2C

• Technology: Low Loss IGBT 2
• Vds (max): 1,700.0 V
• Ic (max): 50.0 A
• Vce(sat) (max): 3.2 V
• Vge(th) (min): 4.5 V

MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T j =25 C
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction and storage temperature
1 )
STATIC CHARACTERISTICS (tested on chip), T j =25 C, unless otherwise specified:
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1)
Edited by INFINEON Technologies AI PS DD HV3, L 7351M, Edition 2, 04.09.2003
values also influenced by parasitic L- and C- in measurement and package.
depending on thermal properties of assembly
p
limited by T
jmax
jmax
V
V
V
I
I
R
C
C
C
t
t
t
t
Symbol
CES
GES
Symbol
Symbol
d ( o n )
r
d(of f )
f
(BR)CES
CE(sat)
GE(th)
Gint
i s s
o s s
r s s
V
V
f =1MHz
T
V
I
V
R
V
C
I
C
j
C E
G E
C C
G E
G
V
CE
= 1 2 5 C
=50A
V
V
=2.2mA , V
= 3 0
CE
GE
GE
=1700V , V
= 2 5 V ,
= 0 V ,
= 1 5 V ,
Conditions
= 90 0 V ,
Conditions
Conditions
=0V , V
=0V , I
=15V, I
V
I
I
V
T
C
c p u l s
j
SIGC104T170R2C
CE
G E
, T
Symbol
s t g
C
GE
C
=3mA
GE
=50A
=20V
GE
=V
1)
=0V
CE
min.
min.
1700
min.
2.2
4.5
-55 ... +150
-
-
-
-
-
-
-
Value
1700
150
1 )
20
Value
Value
typ.
Value
typ.
0.03
typ.
2.7
5.5
3.5
tbd
tbd
0.1
0.1
0.9
5
max.
max.
max.
300
3.2
6.5
12
-
-
-
-
-
-
-
Unit
°C
Unit
nF
Unit
µs
V
A
A
V
Unit
µA
nA
V