BAV70W Infineon Technologies, BAV70W Datasheet - Page 3

no-image

BAV70W

Manufacturer Part Number
BAV70W
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAV70W

Packages
SOT323
Configuration
Dual
Vr (max)
80.0 V
If (max)
200.0 mA
Ir (max)
150.0 nA
Trr (max)
4.0 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV70W
Manufacturer:
ON
Quantity:
500 000
Part Number:
BAV70W
Manufacturer:
NXP
Quantity:
300 000
Part Number:
BAV70W
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BAV70W T/R
Manufacturer:
PANJIT/ 强茂
Quantity:
20 000
Part Number:
BAV70W,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BAV70W-7-F
Manufacturer:
Diodes Inc
Quantity:
25 227
Part Number:
BAV70W-7-F
Manufacturer:
DIODES
Quantity:
150
Part Number:
BAV70W-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
BAV70W-7-F
Quantity:
45 000
Part Number:
BAV70W-AU
Manufacturer:
PANJIT/强茂
Quantity:
20 000
Part Number:
BAV70W115
Manufacturer:
NXP Semiconductors
Quantity:
30 612
Part Number:
BAV70WH6327
Manufacturer:
INTERSIL
Quantity:
3 047
Part Number:
BAV70WS
Manufacturer:
ST
0
Part Number:
BAV70WT1G
Manufacturer:
ON
Quantity:
2 320
Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
V
V
Forward voltage
I
I
I
I
I
AC Characteristics
Diode capacitance
V
Reverse recovery time
I
R
Test circuit for reverse recovery time
(BR)
F
F
F
F
F
F
R
R
R
R
L
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 150 mA
= 10 mA, I
= 70 V
= 25 V, T
= 70 V, T
= 100
= 0 V, f = 1 MHz
= 100 µA
A
A
R
= 150 °C
= 150 °C
= 10 mA, measured at I
F
D.U.T.
Oscillograph
A
= 25°C, unless otherwise specified
EHN00019
R
= 1mA ,
Pulse generator: t
Oscillograph: R = 50
3
Symbol
V
I
V
C
t
R
rr
(BR)
F
T
R
p
i
min.
= 100ns, D = 0.05, t
= 50
85
-
-
-
-
-
-
-
-
-
-
t
r
= 0.35ns, C = 0.05pF
Values
typ.
-
-
-
-
-
-
-
-
-
-
-
max.
1000
1200
1250
0.15
715
855
1.5
30
50
4
-
2007-09-19
BAV70...
r
= 0.6ns,
Unit
V
µA
mV
pF
ns

Related parts for BAV70W