BAW101 Infineon Technologies, BAW101 Datasheet - Page 2

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BAW101

Manufacturer Part Number
BAW101
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAW101

Packages
SOT143-4-1
Configuration
Dual
Vr (max)
300.0 V
If (max)
250.0 mA
Ir (max)
150.0 nA
Trr (max)
1,000.0 ns

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Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
V
Forward voltage
I
Thermal Resistance
Parameter
Junction - soldering point
BAW101
AC Characteristics
Diode capacitance
V
Reverse recovery time
I
R
Test circuit for reverse recovery time
1
(BR)
F
F
For calculation of R
R
R
R
L
= 100 mA
= 10 mA, I
= 250 V
= 250 V, T
= 100
= 0 V, f = 1 MHz
= 100 µA
R
A
= 10 mA, measured at I
= 150 °C
thJA
F
D.U.T.
please refer to Application Note Thermal Resistance
1)
Oscillograph
A
= 25°C, unless otherwise specified
EHN00019
R
= 1mA,
Oscillograph: R = 50 , t
Pulse generator: t
2
Symbol
V
I
V
Symbol
R
C
t
R
rr
(BR)
F
thJS
T
R
p
i
min.
300
= 10 s, D = 0.05, t
= 50
-
-
-
-
-
r
= 0.35ns, C
Values
Value
typ.
330
-
-
-
-
6
1
max.
0.15
1.3
50
BAW101...
-
2007-04-20
-
-
r
1pF
= 0.6ns,
Unit
V
µA
V
Unit
K/W
pF
µs

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