ESD5V0S5US Infineon Technologies, ESD5V0S5US Datasheet - Page 2

• Manufacturer Part Number: ESD5V0S5US
• Manufacturer: Infineon Technologies

Specifications of ESD5V0S5US

• Packages: SOT363
• Vesd(min)(iec61000-4-2 Contact): 30.0 kV
• Vrwm: 5.0 V
• Vbr (min): 5.7 V
• Ct, Cl @ 0v: 70.0 pF
• Ir (max): 5.0 µA

Maximum Ratings at T
Parameter
ESD contact discharge per diode
Peak pulse current ( t
Peak pulse power ( t
Operating temperature range
Storage temperature
Electrical Characteristics at T
Parameter
Characteristics -
Reverse working voltage
Breakdown voltage
I
Reverse current
V
V
Clamping voltage (positive transients)
I
I
Forward clamping voltage (negative transients)
I
I
Diode capacitance
V
V
1
2
(BR)
PP
PP
PP
PP
V
I
pp
R
R
R
R
ESD
= 3.3 V
= 5 V
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
according to IEC61000-4-5
= 1 A, t
= 10 A, t
= 1 A, t
= 10 A, t
= 1 mA
according to IEC61000-4-2
p
p
p
p
= 8/20 µs
= 8/20 µs
= 8/20 µs
= 8/20 µs
p
p
= 8 / 20 µs) per diode
2)
2)
= 8 / 20 µs) per diode
2)
2)
A
= 25°C, unless otherwise specified
A
1)
= 25°C, unless otherwise specified
2)
2
Symbol
V
I
P
T
T
Symbol
V
V
I
V
V
C
pp
R
op
stg
ESD
pk
RWM
(BR)
CL
FC
T
min.
5.7
-
-
-
-
-
-
-
-
-
-55...125
-65...150
Values
Value
10.5
130
typ.
6.7
3.5
30
10
70
35
5
1
7
-
-
ESD5V0SxUS
max.
5.3
7.7
13
90
55
1
5
3
6
2011-06-17
9
Unit
kV
A
W
°C
Unit
V
µA
V
pF