ESD8V0R1B-02LS Infineon Technologies, ESD8V0R1B-02LS Datasheet - Page 3

• Manufacturer Part Number: ESD8V0R1B-02LS
• Manufacturer: Infineon Technologies

Specifications of ESD8V0R1B-02LS

• Packages: TSSLP-2-1
• Vesd(min)(iec61000-4-2 Contact): 15.0 kV
• Vrwm: -8.0 - 14.0 V
• Vbr (min): 8.5 V
• Ct, Cl @ 0v: 4.0 pF
• Ir (max): -

Non-repetitive peak pulse power
P
Reverse current I
T
A
pk
= Parameter
10
10
= ƒ (t
10
10
10
10
10
nA
10
W
-1
-2
3
2
1
0
1
0
10
0
-8
p
)
10
2
-7
10
4
-6
R
10
= ƒ(V
-5
6
TA = 85°C
TA = 25°C
10
D= 0
D= .005
D= .01
D= .02
D= .05
D= .1
D= .2
D= .5
-4
R
8
)
10
-3
10
10
-2
V
t p
V
s
R
14
10
0
3
Power derating curve P
Diode capacitance C
f = 1MHz
110
pF
%
90
80
70
60
50
40
30
20
10
0
7
5
4
3
2
1
0
0
0
2
25
4
50
6
T
75
= ƒ (V
pk
8
ESD8V0R1B...
= ƒ (T
100
10
R
)
2009-12-18
A
12
°C
)
T A
V
V
R
150
15