BGB741L7ESD Infineon Technologies, BGB741L7ESD Datasheet - Page 11

• Manufacturer Part Number: BGB741L7ESD
• Manufacturer: Infineon Technologies

Specifications of BGB741L7ESD

• Packages: TSLP-7-1
• Gain (typ): 19.0 dB
• F (typ): 1.0 dB
• P-1db (out): 10.0 dBm
• I (typ): 5.5 - 30.0 mA
• Frequency Hz: 30 MHz - 5 GHz

Table 10
Parameter
Minimum Noise Figure
Noise Figure in 50
Transducer Gain
Maximum Available Power Gain
Input 1 dB Gain compression point
Input 3
Input Return Loss
Output Return Loss
1) Test fixture losses extracted
2) Test fixture losses extracted
3) Measured on an application board according to figure 2) presenting roughly a 50
Table 11
Parameter
Minimum Noise Figure
Noise Figure in 50
Transducer Gain
Maximum Available Power Gain
Input 1 dB Gain compression point
Input 3
Data Sheet
quiescent current, that is at small RF input power level. I
rd
rd
Order Intercept Point
Order Intercept Point
AC Characteristics, V
AC Characteristics, V
System
System
1)
1)
2)
2)
3)
3)
C
C
= 3 V,
= 3 V,
Symbol
NF
NF
|S
G
IP
IIP
R.L.
R.L.
Symbol
NF
NF
|S
G
IP
IIP
ma
ma
21
21
1dB
1dB
min
50
3
min
50
3
|²
|²
in
out
f
f
= 1900 MHz
= 2400 MHz
Min.
Min.
C
11
increases as RF input power level approaches P1dB.
Typ.
1.05
1.05
1.15
1.1
17.5
19
18
19.5
-4
-6
2.5
1
13.5
15
13.5
21
Typ.
1.1
1.05
1.15
1.1
17
18.5
17.5
19
-3.5
-5.5
3
1
Values
Values
Max.
Max.
system to the device. I
Unit
dB
dB
dB
dB
dBm
dBm
dB
dB
Unit
dB
dB
dB
dB
dBm
dBm
Electrical Characteristics
Note /
Test Condition
Z
I
I
Z
I
I
I
I
Z
I
I
I
I
I
I
I
I
I
I
Note /
Test Condition
Z
I
I
Z
I
I
I
I
Z
I
I
I
I
I
I
Rev. 1.0, 2009-04-17
C
C
C
C
C
C
C
C
Cq
Cq
C
C
C
C
C
C
C
C
C
C
C
C
C
C
Cq
Cq
C
C
S
S
L
S
S
L
BGB741L7ESD
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
=
=
=
=
=
=
= 6 mA
= 10 mA
= 6 mA
= 10 mA
Z
Z
Z
Z
Z
Z
Lopt
Lopt
Sopt
L
Sopt
L
= 50
= 50
Cq
,
,
is the
Z
Z
S
S
=
=
Z
Z
Sopt
Sopt