BFS17S Infineon Technologies, BFS17S Datasheet

no-image

BFS17S

Manufacturer Part Number
BFS17S
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFS17S

Packages
SOT363
Vceo (max)
15.0 V
Ic(max)
25.0 mA
Nfmin (typ)
3.0 dB
Gmax (typ)
12.7 dB
Oip3
22.5 dBm

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS17S
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Thermal Resistance
Parameter
Junction - soldering point
NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
• BFS17S: For orientation in reel see
• Pb-free (RoHS compliant) package
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17S
Maximum Ratings at T
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1
2
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
collector currents from 1 mA to 20 mA
package information below
≤ 93 °C
thJA
Marking
MCs
please refer to Application Note AN077 (Thermal Resistance Calculation)
1)
A
2)
= 25 °C, unless otherwise specified
1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
Pin Configuration
1
Symbol
R
Symbol
V
V
V
I
I
P
T
T
T
C
CM
thJS
J
A
Stg
CEO
CBO
EBO
tot
-65 ... 150
-65 ... 150
6
5
4
Value
≤ 240
Value
280
150
2.5
15
25
25
50
Package
2011-07-20
BFS17S
1
2
3
Unit
K/W
Unit
V
mA
mW
°C

Related parts for BFS17S

BFS17S Summary of contents

Page 1

... NPN Silicon RF Transistor • For broadband amplifiers GHz at collector currents from • BFS17S: For orientation in reel see package information below • Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BFS17S MCs Maximum Ratings ° ...

Page 2

... DC current gain mA pulse measured mA pulse measured C CE Collector-emitter saturation voltage mA 25°C, unless otherwise specified A Symbol V (BR)CEO I CBO I EBO CEsat 2 BFS17S Values Unit min. typ. max µ 0. 100 - 40 - 150 0.1 0.4 V ...

Page 3

... mA 800 MHz = 25°C, unless otherwise specified A Symbol 21e = Z = 50Ω -1dB = Z = 50Ω Values min. typ. max. 1 1.4 1.3 2.5 - 0.55 0.8 - 0.2 - 0.9 1. min 22 2011-07-20 BFS17S Unit GHz - - dBm - - ...

Page 4

... T S Collector-base capacitance C Emitter-base capacitance MHz 1.2 pF 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 ƒ(t thJS 0.5 0.2 0.1 0.05 0.02 0 0.01 0.005 ƒ( CEB CCB 2011-07-20 BFS17S ) ƒ( ...

Page 5

... Transition frequency parameter CE 3 GHz 2 1 10V 0. BFS17S 2011-07-20 ...

Page 6

... Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. ackage SOT363 P 2 ±0.2 +0.1 6x 0.2 0.1 MAX. -0.05 0 0.65 0.65 0 0.3 0.65 0.65 Manufacturer 2005, June Date code (Year/Month) BCR108S Type code 4 2.15 Pin 1 marking 6 BFS17S 0.9 ±0.1 A +0.1 0.15 -0.05 0.2 1.1 2011-07-20 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. 7 BFS17S 2011-07-20 ...

Related keywords