2SK2975 MITSUBISHI, 2SK2975 Datasheet
2SK2975
Related parts for 2SK2975
2SK2975 Summary of contents
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... DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES • High power gain:Gpe 8.4dB @V =9.6V,f=450MHz,Pin=30dBm DD • High efficiency:55% typ. • Source case type seramic package (connected internally to source) APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets ...
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... R2 C11 CR10-562 GR40-270 5600 27pF C7 GR40-102 1000pF C5 C6 GR40-102 1000pF 10 µF 50V MITSUBISHI RF POWER MOS FET 2SK2975 I VS 4.5 V =9.6V DS 4.0 T =25˚C C 3.5 3.0 2.5 2.0 1.5 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 add VS ...
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... MITSUBISHI RF POWER MOS FET 2SK2975 V =9.6V 97.418 0.559 -143.723 65.065 0.636 -154.490 40.799 0.680 -158.082 20.767 0.720 -159.659 2.085 ...