ATF-33143 Avago Technologies, ATF-33143 Datasheet

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ATF-33143

Manufacturer Part Number
ATF-33143
Description
Manufacturer
Avago Technologies
Datasheet

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Description
Avago’s ATF-33143 is a high dynamic range, low noise
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount
plastic package.
Based on its featured performance, ATF-33143 is ideal for
the first or second stage of base station LNA due to the
excellent combination of low noise figure and enhanced
linearity
Wireless LAN, WLL/RLL, MMDS, and other systems requiring
super low noise figure with good intercept in the 450 MHz
to 10 GHz frequency range.
Note:
1. From the same PHEMT FET family, the smaller geometry ATF-34143
Surface Mount Package SOT-343
SOURCE
ATF-33143
Low Noise Pseudomorphic HEMT in a Surface
Mount Plastic Package
Data Sheet
Pin Connections and Package Marking
Note:
Top View. Package marking provides
orientation and identification.
“3P” = Device code
“x” = Date code character. A new character
DRAIN
may also be considered for the higher gain performance, particularly
in the higher frequency band (1.8 GHz and up).
is assigned for each month, year.
[1]
. The device is also suitable for applications in
SOURCE
GATE
Features
• Lead-free Option Available
• Low Noise Figure
• Excellent Uniformity in Product Specifications
• 1600 micron Gate Width
• Low Cost Surface Mount Small Plastic Package
• Tape-and-Reel Packaging Option Available
Specifications
1.9 GHz; 4V, 80 mA (Typ.)
• 0.5 dB Noise Figure
• 15 dB Associated Gain
• 22 dBm Output Power at 1 dB Gain Compression
• 33.5 dBm Output 3
Applications
• Tower Mounted Amplifier, Low Noise Amplifier and
• LNA for Wireless LAN, WLL/RLL and MMDS
• General Purpose Discrete PHEMT for other Ultra Low
SOT-343 (4 lead SC-70)
Driver Amplifier for GSM/TDMA/CDMA Base Stations
Applications
Noise Applications
rd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Order Intercept

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ATF-33143 Summary of contents

Page 1

... Data Sheet Description Avago’s ATF-33143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured performance, ATF-33143 is ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced linearity [1] ...

Page 2

... ATF-33143 Absolute Maximum Ratings Symbol Parameter V Drain - Source Voltage DS V Gate - Source Voltage GS V Gate Drain Voltage [ Drain Current [ Total Power Dissipation diss P RF Input Power in max T Channel Temperature CH T Storage Temperature STG θ Thermal Resistance [6] jc Product Consistency Distribution Charts 500 +0.6 V 400 300 0 V 200 100 –0 ...

Page 3

... ATF-33143 DC Electrical Specifications Symbol Parameters and Test Conditions I Saturated Drain Current [1] dss V [1] Pinchoff Voltage P I Quiescent Bias Current d g [1] Transconductance m I Gate to Drain Leakage Current GDO I Gate Leakage Current gss NF Noise Figure G Associated Gain [3] a Output 3 rd Order OIP3 Intercept Point [ Compressed P 1dB Compressed Power Notes: 1. Guaranteed at wafer probe level. 2. Typical value determined from a sample size of 450 parts from 9 wafers. ...

Page 4

... ATF-33143 Typical Performance Curves 100 120 I (mA) DSQ Figure 6. OIP3, IIP3 vs. Bias at 2 GHz. [ 100 120 I (mA) DSQ Figure 8. P vs. Bias at 2 GHz. [1,2] 1dB 16 1 ...

Page 5

... ATF-33143 Typical Performance Curves, 1 1.0 0 FREQUENCY (GHz) Figure 12. F vs. Frequency and Current at 4V. min 25 25C -40C 85C FREQUENCY (GHz) Figure 14. F and G vs. Frequency and Temp at min 4V mA ...

Page 6

... ATF-33143 Typical Performance Curves 100 120 I (mA) DS [1] Figure 18. P vs. I Active Bias Tuned for NF @ 1dB DS 4V GHz. Note: 1. Measurements made on a fixed tuned test board that was tuned for optimal gain match with reasonable noise figure bias. This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 6 continued 25 20 ...

Page 7

... ATF-33143 Power Parameters Tuned for Max P Freq P I 1dB d (GHz) (dBm) (mA) 0.9 20.7 89 1.5 21.2 91 1.8 21.1 80 2.0 21.6 81 4.0 23.0 97 6.0 24.0 130 70 P out 60 Gain PAE -10 -20 -40 -30 -20 - (dBm) in Figure 20. Swept Power Tuned for Max P 1dB V =4V mA, 2 GHz. DS DSQ Notes: 1 ...

Page 8

... ATF-33143 Typical Noise Parameters Γ Freq. F min opt GHz dB Mag. 0.5 0.26 0.45 0.9 0.30 0.38 1.0 0.31 0.36 1.5 0.34 0.31 1.8 0.34 0.26 2.0 0.39 0.27 2.5 0.51 0.28 3.0 0.53 0.32 4.0 0.61 0.41 5.0 0.70 0.49 6.0 0.82 0.53 7.0 0.93 0.59 8.0 1.04 0.62 9.0 1.12 0.67 10.0 1.21 0.69 Notes: 1. The F values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these min measurements a true F is calculated. Refer to the noise parameter application section for more information. min 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier ...

Page 9

... ATF-33143 Typical Noise Parameters Γ Freq. F min opt GHz dB Mag. 0.5 0.24 0.45 0.9 0.29 0.38 1.0 0.31 0.34 1.5 0.37 0.28 1.8 0.34 0.25 2.0 0.38 0.25 2.5 0.51 0.28 3.0 0.52 0.31 4.0 0.58 0.40 5.0 0.68 0.46 6.0 0.80 0.54 7.0 0.89 0.57 8.0 1.01 0.61 9.0 1.09 0.65 10.0 1.18 0.68 Notes: 1. The F values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these min measurements a true F is calculated. Refer to the noise parameter application section for more information. min 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier ...

Page 10

... ATF-33143 Typical Noise Parameters Γ Freq. F min opt GHz dB Mag. 0.5 0.23 0.43 0.9 0.28 0.35 1.0 0.29 0.35 1.5 0.34 0.26 1.8 0.34 0.23 2.0 0.38 0.22 2.5 0.52 0.25 3.0 0.53 0.30 4.0 0.61 0.39 5.0 0.68 0.47 6.0 0.83 0.52 7.0 0.91 0.58 8.0 1.04 0.61 9.0 1.09 0.66 10.0 1.13 0.70 Notes: 1. The F values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these min measurements a true F is calculated. Refer to the noise parameter application section for more information. min 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier ...

Page 11

... ATF-33143 Typical Noise Parameters Γ Freq. F min opt GHz dB Mag. 0.5 0.30 0.44 0.9 0.33 0.36 1.0 0.34 0.33 1.5 0.38 0.26 1.8 0.37 0.25 2.0 0.40 0.23 2.5 0.53 0.27 3.0 0.54 0.31 4.0 0.60 0.38 5.0 0.68 0.46 6.0 0.82 0.49 7.0 0.89 0.56 8.0 1.00 0.60 9.0 1.07 0.66 10.0 1.16 0.68 Notes: 1. The F values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these min measurements a true F is calculated. Refer to the noise parameter application section for more information. min 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier ...

Page 12

... ATF-33143 Typical Noise Parameters Γ Freq. F min opt GHz dB Mag. 0.5 0.29 0.42 0.9 0.33 0.33 1.0 0.34 0.32 1.5 0.38 0.26 1.8 0.39 0.22 2.0 0.42 0.22 2.5 0.47 0.25 3.0 0.51 0.29 4.0 0.63 0.39 5.0 0.72 0.46 6.0 0.82 0.51 7.0 0.93 0.57 8.0 1.03 0.61 9.0 1.13 0.66 10.0 1.22 0.69 Notes: 1. The F values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these min measurements a true F is calculated. Refer to the noise parameter application section for more information. min 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier ...

Page 13

... ATF-33143 Typical Noise Parameters Γ Freq. F min opt GHz dB Mag. 0.5 0.30 0.42 0.9 0.35 0.32 1.0 0.35 0.32 1.5 0.40 0.23 1.8 0.42 0.20 2.0 0.45 0.19 2.5 0.49 0.23 3.0 0.55 0.28 4.0 0.68 0.38 5.0 0.75 0.48 6.0 0.90 0.52 7.0 1.00 0.57 8.0 1.12 0.62 9.0 1.19 0.67 10.0 1.33 0.69 Notes: 1. The F values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these min measurements a true F is calculated. Refer to the noise parameter application section for more information. min 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier ...

Page 14

Noise Parameter Applications Information F values at 2 GHz and higher are based on min measurements while the F below 2 GHz have been mins extrapolated. The F values are based on a set of min 16 noise figure measurements made ...

Page 15

... ATF-33143 Die Model Statz Model MESFETM1 NFET=yes Cgs=1.6 pF PFET=no Gdcap=3 Vto=–0.95 Cgd=0.32 pF Beta=0.48 Rgd= Lambda=0.09 Tqm= Alpha=4 Vmax= B=0.8 Fc= Tnom=27 Rd=.125 Idstc= Rg=1 Vbi=0.7 Rs=0.0625 Tau= Ld=0.00375 nH Betatce= Lg-0.00375 nH Delta1=0.2 Ls=0.00125 nH Delta2= Cds=0.08 pF Gscap=3 Crf=0.1 This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet ...

Page 16

... Part Number Ordering Information No. of Part Number Devices ATF-33143-TR1G 3000 ATF-33143-TR2G 10000 ATF-33143-BLKG 100 Package Dimensions SC-70 4L/SOT-343 1.30 (.051) BSC HE 1.15 (.045) BSC DIMENSIONS (mm) SYMBOL MIN. MAX. E 1.15 1.35 D 1.85 2.25 HE 1.80 2.40 A 0.80 1.10 A2 0.80 1.00 A1 0.00 0.10 b 0.25 0.40 b1 0.55 0.70 c 0.10 0.20 L 0.10 0.46 16 Container 7” Reel 13” Reel antistatic bag E L NOTES: 1 ...

Page 17

Recommended PCB Pad Layout for Avago’s SC70 4L/SOT-343 Products 1.30 0.051 1.00 0.039 2.00 0.60 0.079 0.024 0.9 0.035 1.15 0.045 Dimensions in mm inches Device Orientation REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE 17 TOP VIEW 4 mm ...

Page 18

... For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-3747EN ...

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