BDP955 Infineon Technologies AG, BDP955 Datasheet

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BDP955

Manufacturer Part Number
BDP955
Description
Manufacturer
Infineon Technologies AG
Datasheet
NPN Silicon AF Power Transistor




Type
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation , T
Junction temperature
Storage temperature
Thermal Resistance

BDP951
BDP953
BDP955
Junction - soldering point
1 For calculation of R
For AF driver and output stages
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP952 ... BDP956 (PNP)
thJA
please refer to Application Note Thermal Resistance
Marking
BDP 951
BDP 953
PDP 955
S
1)
= 99 °C
1 = B
1 = B
1 = B
Symbol
V
V
V
I
I
I
I
P
T
T
R
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
Pin Configuration
2 = C
2 = C
2 = C
1
BDP 951
3 = E
3 = E
3 = E
100
80
5
-65 ... 150
BDP 953
4
4 = C
4 = C
4 = C
100
120
200
500
150

5
3
5
3
17
BDP951 ... BDP955
BDP 955
Package
SOT223
SOT223
SOT223
120
140
1
Aug-06-2001
5
2
VPS05163
Unit
V
A
mA
W
°C
K/W
3

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BDP955 Summary of contents

Page 1

... C Symbol BDP 951 V CEO V CBO V EBO °C P tot stg R thJS 1 BDP951 ... BDP955 4 1 Package SOT223 SOT223 SOT223 BDP 953 BDP 955 80 100 120 100 120 140 200 ...

Page 2

... Pulse test 300 25°C, unless otherwise specified. A Symbol V (BR)CEO BDP951 BDP953 BDP955 V (BR)CBO BDP951 BDP953 BDP955 V (BR)EBO I CBO I CBO I EBO CEsat V BEsat BDP951 ... BDP955 Values Unit min. typ. max 100 - - 120 - - 100 - - 120 - - 140 - - 100 nA - ...

Page 3

... Permissible Pulse Load R tot 120 °C 100 150 current gain BDP951 ... BDP955 = f (t thJS 0.5 0.2 0 0.1 0.05 0.02 0.01 0.005 100°C 25°C -50°C 2 ...

Page 4

... typ 10 10 100 120 °C 150 T A Collector current -50°C 25°C 100° 0.8 1.0 V 1.3 V BEsat 4 BDP951 ... BDP955 ), CEsat 100°C 25°C -50° 0.0 0.2 0 0.0 0.2 0.4 0.6 0.8 Aug-06-2001 0.8 V CEsat -50° ...

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