BFG196 Infineon Technologies AG, BFG196 Datasheet
BFG196
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BFG196 Summary of contents
Page 1
... Application Note Thermal Resistance thJA Pin Configuration Symbol V CEO V CES V CBO V EBO tot stg R thJS 1 BFG196 VPS05163 Package SOT223 Value Unit 100 mA 12 800 mW 150 °C -65 ... 150 -65 ... 150 K/W 75 Jun-27-2001 ...
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... CB E Emitter-base cutoff current current gain mA 25°C, unless otherwise specified. A Symbol V (BR)CEO I CES I CBO I EBO BFG196 Values Unit min. typ. max 100 µ 100 µA 50 100 200 - Jun-27-2001 ...
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... 900 MHz f = 1.8 GHz (k-(k - 25°C, unless otherwise specified. A Symbol Sopt Sopt L Lopt |S 21e = 1 BFG196 Values min. typ. max 0.97 1 Jun-27-2001 Unit GHz pF dB ...
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... S 120 °C 100 150 Permissible Pulse Load thJS p P totmax totDC 0.005 0.01 0.02 0.05 1 0.1 0.2 0 Jun-27-2001 BFG196 - ...
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... Power Gain 1.8GHz V = Parameter 0. 120 10V f Jun-27-2001 BFG196 0.7V mA 120 0.7V mA 120 I C ...
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... Power Gain | 10V 0 1V 0.7V -5 2.5 GHz 3 f(f) 21 Parameter I =50mA C 0.5 1.0 1.5 2.0 2.5 Jun-27-2001 BFG196 =f 120 I C 10V 1V 0.7V GHz 3.5 f ...