IPP075N15N3G Infineon Technologies AG, IPP075N15N3G Datasheet
IPP075N15N3G
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IPP075N15N3G Summary of contents
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OptiMOS ® 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation P =f(T ) tot C 320 280 240 200 160 120 Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 350 10 V 300 250 200 150 100 Typ. transfer characteristics I =f |>2|I |R ...
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Drain-source on-state resistance R =f =100 A; V DS(on 98 -60 - Typ. capacitances C =f MHz ...
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Avalanche characteristics =25 Ω parameter: T j(start) 1000 100 Drain-source breakdown voltage V =f BR(DSS 170 165 160 155 150 ...
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PG-TO220-3: Outline Rev. 2.03 IPB072N15N3 G page 8 IPP075N15N3 G IPI075N15N3 G 2008-07-15 ...
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PG-TO263-3: Outline Rev. 2.03 IPB072N15N3 G page 9 IPP075N15N3 G IPI075N15N3 G 2008-07-15 ...
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PG-TO262-3: Outline Rev. 2.03 IPB072N15N3 G page 10 IPP075N15N3 G IPI075N15N3 G 2008-07-15 ...
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... Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, ...