PBSS301PD NXP Semiconductors, PBSS301PD Datasheet
PBSS301PD
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PBSS301PD Summary of contents
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... PBSS301PD PNP low V Rev. 03 — 17 December 2007 1. Product profile 1.1 General description PNP low V Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301ND. 1.2 Features I Very low collector-emitter saturation resistance I Ultra low collector-emitter saturation voltage continuous collector current peak current I High effi ...
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... T amb Rev. 03 — 17 December 2007 PBSS301PD PNP low V CEsat Simplified outline Symbol Marking code C8 Min - ...
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... P tot (mW) 1200 (1) 800 (2) (3) (4) 400 standard footprint 2 3 Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat Min Max - 150 65 +150 65 +150 10 % and pulse width t 10 ms. p 006aaa270 75 125 175 amb 2 2 © ...
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... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat Min Typ [ [ [ [ [1][5] - ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS301PD_3 Product data sheet Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat 006aaa272 (s) p 006aaa273 ...
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... Boff turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 03 — 17 December 2007 PBSS301PD PNP low V CEsat Min Typ = ...
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... V BEsat (V) 1.1 0.9 0.7 0.5 0.3 0 (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat I (mA) = 200 B 180 160 140 8 120 0.4 0.8 1.2 1 amb collector-emitter voltage; typical values ...
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... R CEsat ( ) 10 10 (2) ( (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat 1 1 (1) ( amb /I = 100 C ...
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... (probe) 450 R2 V DUT 0. 0.15 A Boff Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform) I (100 %) 006aaa266 ...
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... PBSS301PD_3 Product data sheet 3.1 2.7 6 3.0 1.7 2.5 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm Packing methods Description SOT457 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat 1.1 0 0.6 0 0.40 0.26 0.25 0.10 04-11-08 [1] Packing quantity 3000 ...
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... Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area solder paste msc422 0.45 1.45 4.45 msc423 © NXP B.V. 2007. All rights reserved. solder lands solder resist occupied area ...
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... Product data sheet Product data sheet Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat Change notice Supersedes - PBSS301PD_2 2 footprint amended - PBSS301PD_1 - - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 17 December 2007 PBSS301PD PNP low V (BISS) transistor CEsat © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 17 December 2007 Document identifier: PBSS301PD_3 ...