RA13H1317M Mitsumi Electronics, Corp., RA13H1317M Datasheet
RA13H1317M
Available stocks
Related parts for RA13H1317M
RA13H1317M Summary of contents
Page 1
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V =0V), only a small leakage current flows into the drain GG and the RF input signal attenuates ...
Page 2
... Harmonic o P Input VSWR in I Gate Current GG V — Stability P V — Load VSWR Tolerance Load VSWR=20:1 All parameters, conditions, ratings, and limits are subject to change without notice. RA13H1317M CONDITIONS V < <12.5V, P =0mW DD in f=135-175MHz = =+25° =50 , unless otherwise specified) ...
Page 3
... OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 30 f=135MHz =5V =50mW out DRAIN VOLTAGE V (V) DD RA13H1317M =Z =50 , unless otherwise specified HARMONICS versus FREQUENCY 120 -20 100 -30 80 -40 60 - -70 185 125 135 FREQUENCY f(MHz) ...
Page 4
... GATE VOLTAGE 30 f=175MHz, V =12.5V =50mW P in out 1.5 2 2.5 3 3.5 4 4.5 GATE VOLTAGE V (V) GG RA13H1317M =Z =50 , unless otherwise specified OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 6 30 f=160MHz =12.5V =50mW ...
Page 5
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) 3.0 ±0.3 7.25 ±0 12.0 ±1 16.5 ±1 43.5 ±1 RA13H1317M 66.0 ±0.5 60.0 ±0.5 51.5 ±0 Ø0.45 ±0.15 55.5 ±1 (50.4) MITSUBISHI ELECTRIC 5/9 MITSUBISHI RF POWER MODULE 2-R2 ±0 Input ( Gate Voltage ( Drain Voltage (V ...
Page 6
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM Signal Pre- Attenuator Attenuator Generator amplifier C1, C2: 4700pF, 22uF in parallel EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT 2 1 RA13H1317M Power DUT Meter =50 G Directional Coupler Power DC Power Supply V Supply MITSUBISHI ELECTRIC ...
Page 7
... When mounting the module with the thermal resistance of 1.53 °C/ W, the channel temperature of each stage transistor is 40.9°C ch1 air 69.6°C ch2 air The 175°C maximum rating for the channel temperature ensures application under derated conditions. RA13H1317M =40% th(ch-case (°C/ W) (A) (V) 4 ...
Page 8
... Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA13H1317M =5V (maximum), the nominal output power becomes available. MITSUBISHI ELECTRIC 8/9 ...
Page 9
... Phone: 408-730-5900 Fax: 408-737-1129 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 RA13H1317M GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-3670 FRANCE: Mitsubishi Electric Europe B ...