RD00HVS1 Mitsumi Electronics, Corp., RD00HVS1 Datasheet
RD00HVS1
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RD00HVS1 Summary of contents
Page 1
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. FEATURES High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets ...
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... Vds(V) Vds VS. Coss CHARACTERISTICS 20 18 Ta=+25°C f=1MHz Vds(V) RD00HVS1 MITSUBISHI RF POWER MOS FET RD00HVS1 Vgs-Ids CHARACTERISTICS 1.0 Ta=+25°C Vds=10V 0.8 0.6 0.4 0.2 0.0 160 200 0 1 Vds VS. Ciss CHARACTERISTICS 20 18 Ta=+25°C Vgs=10V f=1MHz 16 Vgs=9V Vgs=8V 14 Vgs=7V 12 Vgs=6V 10 ...
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... Vdd-Po CHARACTERISTICS 280 1.6 Ta=25°C 1.4 f=520MHz 240 Po Pin=15mW 1.2 Idq=50mA 200 Zg=ZI=50 ohm 1.0 160 0.8 Idd 120 0.6 80 0.4 40 0 MITSUBISHI ELECTRIC 3/6 RD00HVS1 120 Po 100 Ta=25°C 40 f=175MHz Vdd=12.5V Idq=50mA 20 Idd Pin(mW) 140 Po 120 100 Ta=25°C f=520MHz 80 Vdd=12.5V Idq=50mA Idd 20 ...
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... ’ ’ ’ ’ MITSUBISHI ELECTRIC 4/6 MITSUBISHI RF POWER MOS FET RD00HVS1 10uF,50V 18. 20.5m m 15m m 4. F-out 250pF L3 3pF 18pF ’ ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA) Freq. S11 [MHz] (mag) (ang) 100 1.004 -35.2 150 0.987 -51.9 175 0.972 -59.7 200 0.957 -67.1 250 0.929 -80.1 300 0.898 -91.5 350 0.875 -101.4 400 0.857 -110.0 450 0 ...
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... These results causes in fire or injury. RD00HVS1 MITSUBISHI RF POWER MOS FET RD00HVS1 warning ! MITSUBISHI ELECTRIC 6/6 10 Jan 2006 ...