RD15HVF1 Mitsumi Electronics, Corp., RD15HVF1 Datasheet
RD15HVF1
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RD15HVF1 Summary of contents
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions. FEATURES High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ ...
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... Gate threshold Voltage TH Pout1 Output power Drain efficiency KD1 Pout2 Output power Drain efficiency KD2 Load VSWR tolerance Load VSWR tolerance Note : Above parameters , ratings , limits and conditions are subject to change. RD15HVF1 RD15HVF1 CONDITIONS RATINGS UNIT Vgs= Vds=0V +/-20 V Tc= °C Zg=Zl=50 1 ...
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... Vds-Ids CHARACTERISTICS 10 Ta=+25° Vds(V) Vds VS. Coss CHARACTERISTICS 100 Ta=+25°C f=1MHz Vds(V) RD15HVF1 RD15HVF1 Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V 160 200 0 2 Vds VS. Ciss CHARACTERISTICS 80 Ta=+25°C Vgs=10V f=1MHz Vgs=9V Vgs=8V 60 Vgs=7V Vgs=6V 40 Vgs=5V 20 ...
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... Ta=25°C f=520MHz Pin=3W Idq=0.5A Zg=ZI=50 ohm 3 15 Idd MITSUBISHI ELECTRIC 4/9 RD15HVF1 Pin-Po CHARACTERISTICS 100 Ta=25°C f=175MHz Vdd=12.5V Idq=0.5A 20 Idd 0 0.5 1.0 1.5 Pin(W) Pin-Po CHARACTERISTICS 100 Ta=25°C f=520MHz 40 Vdd=12.5V Idq=0.5A 20 Idd ...
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... Vdd Vgg C1 9.1kOHM L3 8.2kOHM 100OHM 175MHz L1 L2 RD15HVF1 25pF 25pF 7 25pF 25pF 25pF 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm MITSUBISHI ELECTRIC 5/9 RD15HVF1 C3 C2 RF-OUT 82pF 25pF 10pF 25pF 74 95 100 10 Jan 2006 ...
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... L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD15HVF1 RD15HVF1 Vdd Vgg C1 9.1kOHM L3 100OHM 15pF 10pF L1 520MHz L2 RD15HVF1 5pF 12pF Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm MITSUBISHI ELECTRIC 6 RF-OUT 56pF ...
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... OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zin , Zout f Zin (MHz) (ohm) 175 2.34-j8.01 520 5.42+j9.22 RD15HVF1 RD15HVF1 f=520MHz Zout f=520MHz Zin f=175MHz Zout Zo=50ohm f=175MHz Zin Zout (ohm) Conditions Po=15W, Vdd=12.5V,Pin=0.6W 3.06+j0.74 Po=15W, Vdd=12.5V,Pin=3.0W 6.02+j12.34 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W RD15HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. S11 [MHz] (mag) (ang) 50 0.717 -145.9 100 0.726 -163.9 150 0.744 -171.1 175 0.748 -173.6 200 0.755 -175.9 250 0.770 -179.0 300 ...
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... Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD15HVF1 RD15HVF1 warning ! MITSUBISHI ELECTRIC 9/9 ...