RD70HVF1 Mitsumi Electronics, Corp., RD70HVF1 Datasheet
RD70HVF1
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RD70HVF1 Summary of contents
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. FEATURES High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ ...
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... Vds(V) Vds VS. Coss CHARACTERISTICS 300 Ta=+25°C 250 f=1MHz 200 150 100 Vds(V) RD70HVF1 MITSUBISHI RF POWER MOS FET RD70HVF1 Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vds VS. Ciss CHARACTERISTICS 350 300 Vgs=3.7V 250 Ta=+25°C f=1MHz 200 Vgs=3.4V 150 Vgs=3 ...
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... Pin(dBm) Vdd-Po CHARACTERISTICS @f=175MHz 100 Ta=25°C f=175MHz 80 Pin=6W Idq=2A Zg=ZI=50 ohm Vdd(V) RD70HVF1 MITSUBISHI RF POWER MOS FET RD70HVF1 Pin-Po CHARACTERISTICS @f=175MHz 100 100 Pin-Po CHARACTERISTICS @f=520MHz 70 100 60 80 ...
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... Vdd Vgg C1 9.1kOHM L2 100pF 72pF 175MHz 100OHM RD70HVF1 L1 18pF 35pF 37pF 8pF 100pF 20 138.5 150.5 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm MITSUBISHI ELECTRIC 4/8 RD70HVF1 C3 C2 0-20pF 56pF RF-OUT 0-20pF 20pF 190 10 Jan 2006 ...
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... L2:2Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD70HVF1 MITSUBISHI RF POWER MOS FET RD70HVF1 Vgg Vdd C1 9.1kOHM L3 15pF 100OHM 15pF 520MHz L2 L1 RD70HVF1 22pF 15pF 15pF 5pF Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm ...
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... Zin, Zout f Zin (MHz) (ohm) 440 0.74-j0.34 520 1.04+j0.63 RD70HVF1 MITSUBISHI RF POWER MOS FET RD70HVF1 Zo=10 f=135MHz Zout f=175MHz Zout f=175MHz Zin f=135MHz Zin Zout (ohm) 0.70+j0.25 Po=90W, Vdd=12.5V,Pin=6W 0.72-j0.36 Po=80W, Vdd=12.5V,Pin=6W f=520MHz Zout Zo=10 f=520MHz Zin f=440MHz Zout f=440MHz Zin ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W RD70HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. S11 [MHz] (mag) (ang) 50 0.885 -174.0 100 0.906 -176.8 150 0.930 -179.0 175 0.939 179.8 200 0.946 178.7 250 0.957 176.7 300 0 ...
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... Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD70HVF1 MITSUBISHI RF POWER MOS FET RD70HVF1 MITSUBISHI ELECTRIC 8/8 10 Jan 2006 ...