S849T Vishay Semiconductors, S849T Datasheet

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S849T

Manufacturer Part Number
S849T
Description
Manufacturer
Vishay Semiconductors
Datasheet
MOSMIC for TV–Tuner Prestage with 12 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 12 V supply voltage.
Features
S849T Marking: 849
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Absolute Maximum Ratings
T
Maximum Thermal Resistance
T
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
Document Number 85051
Rev. 3, 20-Jan-99
D
D
D
D
amb
amb
2
3
Integrated gate protection diodes
Low noise figure
High gain
Biasing network on chip
Parameter
= 25
= 25
94 9279
_
_
1
C, unless otherwise specified
C, unless otherwise specified
4
Parameter
plated with 35
m
m Cu
Test Conditions
13 579
Test Conditions
T
amb
60 ° C
S849TR Marking: 49R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
D
D
D
Electrostatic sensitive device.
Observe precautions for handling.
4
Improved cross modulation at gain reduction
High AGC-range
SMD package
1
AGC
RF in
94 9278
C block
C block
3
2
3
G1
G2
Symbol
R
V
Symbol
I
G1/G2SM
G1/G2SM
thChA
V
T
T
P
I
DS
stg
Ch
D
tot
S849T/S849TR
Vishay Semiconductors
S
D
–55 to +150
Value
C block
450
Value
RFC
200
150
7.5
16
30
10
www.vishay.com
95 10831
RF out
94 9296
V
DD
Unit
mW
Unit
K/W
mA
mA
° C
° C
V
V
1 (8)

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S849T Summary of contents

Page 1

... Integrated gate protection diodes D Low noise figure D High gain D Biasing network on chip 9279 3 4 S849T Marking: 849 Plastic case (SOT 143 Source Drain Gate Gate 1 Absolute Maximum Ratings unless otherwise specified amb Parameter Drain - source voltage Drain current ...

Page 2

... S849T/S849TR Vishay Semiconductors Electrical DC Characteristics = unless otherwise specified T amb Parameter Gate 1 - source mA, V G1S breakdown voltage Gate 2 - source mA, V G2S breakdown voltage Gate 1 - source + G1S leakage current – G1S Gate 2 - source G2S leakage current ...

Page 3

... S849T/S849TR Vishay Semiconductors S22 LOG ANG ANG MAG deg dB deg 87.7 –0.17 –1.7 85.2 –0.20 –3.3 82.0 –0.22 –5.0 79.5 –0.25 –6.6 76.4 –0.26 –8.4 75.0 –0.31 –9.8 72.6 –0.34 –11.3 70.9 –0.38 –12.8 69.5 –0.44 –14.3 67.8 – ...

Page 4

... S849T/S849TR Vishay Semiconductors Typical Characteristics (T 250 200 150 100 100 T – Ambient Temperature ( 10759 amb Figure 1. Total Power Dissipation vs. Ambient Temperature – Drain Source Voltage ( 10760 DS Figure 2. Drain Current vs. Drain Source Voltage ...

Page 5

... Gate 2 Source Voltage ( 10763 G2S Figure 7. Transducer Gain vs. Gate 2 Source Voltage Document Number 85051 Rev. 3, 20-Jan- =12V 11138 Figure 8. Cross Modulation vs. Gate 2 Source Voltage S849T/S849TR Vishay Semiconductors V =12V DS f=800MHz – Gate 2 Source Voltage ( V ) G2S www.vishay.com 5 (8) ...

Page 6

... S849T/S849TR Vishay Semiconductors mA G2S j0.5 j0.2 0 0.2 0 –j0.2 800 1300MHz –j0.5 12 948 –j Figure 9. Input reflection coefficient 120 550 800 300 1050 50 1300MHz 1.0 –150 –120 –90 12 950 Figure 10. Forward transmission coefficient www.vishay.com 6 ( ...

Page 7

... Dimensions of S849T in mm Dimensions of S849TR in mm Document Number 85051 Rev. 3, 20-Jan-99 S849T/S849TR Vishay Semiconductors 96 12240 96 12239 www.vishay.com 7 (8) ...

Page 8

... S849T/S849TR Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

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