S868T Vishay Semiconductors, S868T Datasheet

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S868T

Manufacturer Part Number
S868T
Description
Manufacturer
Vishay Semiconductors
Datasheet
BIPMIC – Cascadable Silicon Bipolar Amplifier
Applications
General purpose 50
band IF and RF amplifiers in commercial and industrial
applications. The 50
Features
S868T Marking: 868
Plastic case (SOT 143)
1 = RF-output, 2 = Ground,
3 = RF-input, 4 = Ground
Absolute Maximum Ratings
T
Maximum Thermal Resistance
T
Device current
RF input power
Total power dissipation
Junction temperature
Storage temperature range
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
Document Number 85056
Rev. 3, 20-Jan-99
D
D
D
D
amb
amb
2
3
Broadband amplification
50
High gain (19 dB @900 MHz)
Low noise figure (2.9 db @900 Mhz)
Parameter
= 25
= 25
94 9279
W
cascadable gain block
_
_
C, unless otherwise specified
C, unless otherwise specified
1
4
Parameter
plated with 35
W
W
gain block for narrow and broad
level allows directly to cascade
m
m Cu
Test Conditions
13 579
T
amb
25 ° C
Test Conditions
this amplifier with minimal external circuitry, thus pro-
viding a simple, cost effective way to achieve high level
amplification.
D
D
D
Electrostatic sensitive device.
Observe precautions for handling.
High output level
Low cost surface mount plastic package
Few external components
3
Typical biasing configuration
Symbol
Symbol
R
I
thJA
P
T
P
bias
T
stg
tot
in
j
Vishay Semiconductors
–65 to +150
Value
450
Value
275
150
55
20
www.vishay.com
S868T
dBm
K/W
Unit
mW
Unit
mA
° C
° C
1 (3)

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S868T Summary of contents

Page 1

... D High gain (19 dB @900 MHz) D Low noise figure (2.9 db @900 Mhz 579 94 9279 3 4 S868T Marking: 868 Plastic case (SOT 143 RF-output Ground RF-input Ground Absolute Maximum Ratings unless otherwise specified amb Parameter Device current RF input power ...

Page 2

... T bias 0 Parameter Power gain 3 dB bandwidth Input VSWR Output VSWR Noise figure Intermodulation distortion Output power @1dB gain compression Device voltage Dimensions of S868T in mm www.vishay.com 2 ( unless otherwise specified amb Test Conditions Symbol 3dB f = 0.1 to 2.5 GHz VSWR f = 0.1 to 2.5 GHz ...

Page 3

... Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone 7131 67 2831, Fax number 7131 67 2423 Document Number 85056 Rev. 3, 20-Jan-99 S868T Vishay Semiconductors www.vishay.com 3 (3) ...

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