SI1024X Vishay Semiconductors, SI1024X Datasheet
SI1024X
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SI1024X Summary of contents
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... 100 Top View Ordering Information: Si1024X-T1-E3 (Lead (Pb)-free) Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... Si1024X Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge Q Gate-Source Charge ...
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... Document Number: 71170 S-80643-Rev. C, 24-Mar- °C, unless otherwise noted 2 4 600 800 1000 0.6 0 °C 0.8 1.0 1.2 1 Si1024X Vishay Siliconix 100 MHz 80 C iss oss 20 C rss Drain-to-Source Voltage (V) DS Capacitance 1.60 1. ...
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... Si1024X Vishay Siliconix TYPICAL CHARACTERISTICS T 0 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...