SI5908DC Vishay Semiconductors, SI5908DC Datasheet

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... Bottom View Ordering Information: Si5908DC-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

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... Si5908DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

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... 300 200 100 16 20 1.6 1.4 1.2 1.0 0.8 0 0.10 0.08 0.06 0. 25_C J 0.02 0.00 1.0 1.2 Si5908DC Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature --50 -- 100 T -- Junction Temperature (_C) J On-Resistance vs. Gate-to-Source Voltage ...

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... Si5908DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0.1 = 250 --0.0 --0.1 --0.2 --0.3 --0.4 --50 -- Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area 100 ...

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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 73074 S-41641—Rev. A, 06-Sep-04 New Product Normalized Thermal Transient Impedance, Junction-to-Foot - -2 10 Square Wave Pulse Duration (sec) Si5908DC Vishay Siliconix - - www.vishay.com 5 ...

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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...