SI6552DQ Vishay Semiconductors, SI6552DQ Datasheet
SI6552DQ
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SI6552DQ Summary of contents
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... N-Channel MOSFET = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C 25_C 70_C Symbol R Si6552DQ Vishay Siliconix P-Channel MOSFET N-Channel P-Channel "8 GS "2.8 "2 "2.3 "2.0 I "20 ...
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... Si6552DQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain Source On State Resistance ...
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... Q - Total Gate Charge (nC) g Document Number: 70175 S-03419—Rev. G, 03-Mar- 1500 1200 = 2 4 Si6552DQ Vishay Siliconix N−CHANNEL Transfer Characteristics 55_C C 125_C Gate-to-Source Voltage (V) GS Capacitance 900 ...
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... Si6552DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.00 0.25 0.50 0. Source-to-Drain Voltage (V) SD Threshold Voltage 1.0 0 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...
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... S-03419—Rev. G, 03-Mar- 1500 1200 900 V = 4.5 V 600 GS 300 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 Si6552DQ Vishay Siliconix P−CHANNEL Transfer Characteristics T = 125_C 25_C C - 55_C Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs ...
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... Si6552DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 25_C J 1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) SD Threshold Voltage 1.0 0 250 µA D 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...