MRF136Y Motorola, MRF136Y Datasheet
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MRF136Y
Manufacturer Part Number
MRF136Y
Description
Manufacturer
Motorola
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field-Effect Transistors
N-Channel Enhancement-Mode MOSFETs
. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range, in either single ended or push–pull configuration.
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Motorola, Inc. 1994
Guaranteed 28 Volt, 150 MHz Performance
MRF136
Output Power = 15 Watts
Narrowband Gain = 16 dB (Typ)
Efficiency = 60% (Typical)
Small–Signal and Large–Signal
100% Tested For Load
Angles With 30:1 VSWR
Space Saving Package For
Excellent Thermal Stability,
Facilitates Manual Gain
Derate above 25 C
Characterization
Mismatch At All Phase
Push–Pull Circuit
Applications — MRF136Y
Ideally Suited For Class A
Operation
Control, ALC and
Modulation Techniques
Characteristic
Characteristic
Rating
Rating
MRF136Y
Output Power = 30 Watts
Broadband Gain = 14 dB (Typ)
Efficiency = 54% (Typical)
MRF136
G
MRF136Y
G
G
D
D
D
S
(FLANGE)
Symbol
Symbol
Symbol
Symbol
V DGR
V DSS
R JC
V GS
S
T stg
P D
T J
I D
MRF136
MRF136
0.314
MRF136Y
CASE 319B–02, STYLE 1
2.5
3.2
CASE 211–07, STYLE 2
65
65
55
15 W, 30 W, to 400 MHz
MRF136
– 65 to +150
MOS BROADBAND
RF POWER FETs
Value
N–CHANNEL
Max
200
MRF136Y
40
MRF136
MRF136Y
MRF136Y
0.571
1.75
100
5.0
MRF136 MRF136Y
65
65
Order this document
by MRF136/D
Watts
W/ C
Unit
Unit
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C
1