M29W040B-55K1 STMicroelectronics, M29W040B-55K1 Datasheet
M29W040B-55K1
Manufacturer Part Number
M29W040B-55K1
Description
Manufacturer
STMicroelectronics
Datasheet
1.M29W040B90N6.pdf
(20 pages)
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M29W040B-55K1
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ST
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Part Number:
M29W040B-55K1
Manufacturer:
ST
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M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
– 10µs per Byte typical
8 UNIFORM 64 Kbytes MEMORY BLOCKS
PLCC32 (K)
TSOP32 (N)
PROGRAM/ERASE CONTROLLER
8 x 20mm
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
TSOP32 (NZ)
8 x 14mm
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
LOW POWER CONSUMPTION
Figure 1. Logic Diagram
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
V CC
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
19
8
– Device Code: E3h
A0-A18
DQ0-DQ7
®
ECOPACK
PACKAGES AVAILABLE
W
M29W040B
E
G
V SS
AI02953
September 2005
1/20
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