M29W040-100K1R STMICROELECTRONICS [STMicroelectronics], M29W040-100K1R Datasheet

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M29W040-100K1R

Manufacturer Part Number
M29W040-100K1R
Description
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Table 1. Signal Names
November 1999
This is information on a product still in productionbut not recommended for new designs.
A0-A18
DQ0-DQ7
E
G
W
V
V
PROGRAM, ERASE and READ OPERATIONS
– Block: 1.5 sec typical
– Chip: 2.5 sec typical
– Program Byte-by-Byte
– Data Polling and Toggle bits Protocol for
– 8 Uniform Blocks of 64 KBytes each
– Block Protection
– Multiblock Erase
– Read mode: 8mA typical (at 12MHz)
– Stand-by mode: 20 A typical
– Automatic Stand-by mode
– Power-down mode: 1 A typical
BLOCK
– Defectivity below 1ppm/year
– Manufacturer Code: 20h
– Device Code: E3h
M29W040 is replaced by the M29W040B
2.7V to 3.6V SUPPLY VOLTAGE for
FAST ACCESS TIME: 100ns
BYTE PROGRAMMING TIME: 12 s typical
ERASE TIME
PROGRAM/ERASE CONTROLLER (P/E.C.)
MEMORY ERASE in BLOCKS
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
POWER DOWN SOFTWARE COMMAND
100,000 PROGRAM/ERASE CYCLES per
20 YEARS DATA RETENTION
ELECTRONIC SIGNATURE
CC
SS
P/E.C. Status
Address Inputs
Data Input / Outputs
Chip Enable
Output Enable
Write Enable
Supply Voltage
Ground
Low Voltage Single Supply Flash Memory
4 Mbit (512Kb x8, Uniform Block)
Figure 1. Logic Diagram
A0-A18
PLCC32 (K)
W
G
E
19
TSOP32 (NZ)
V CC
V SS
M29W040
8 x 14mm
NOT FOR NEW DESIGN
M29W040
TSOP32 (N)
8 x 20mm
8
DQ0-DQ7
AI02074
1/31

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M29W040-100K1R Summary of contents

Page 1

... M29W040 is replaced by the M29W040B 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Data Polling and Toggle bits Protocol for P/E ...

Page 2

... DQ7 AI02075 DESCRIPTION The M29W040 is a non-volatile memory that may be erased electrically at the block level, and pro- grammed Byte-by-Byte. The interface is directly compatible with most mi- A11 croprocessors. PLCC32, TSOP32 (8 x 20mm)and A9 TSOP32 (8 x 14mm) packages are available. Both ...

Page 3

... Data Polling, Toggle and Error data may be read at any time, including during the program- ming or erase cycles, to monitor the progress of the operation.When power is first applied falls below V , the command interface is reset to LKO Read Array. M29W040 Value Unit ...

Page 4

... M29W040 Table 3. Operations Operation E Read V IL Write V IL Output Disable V IL Standby V IH Note Table 4. Electronic Signature Code E G Manufact. Code Device Code Table 5. Block Protection Status Code Protected Block ...

Page 5

... Puts the memory in Power Down mode where power consumption is reduced to typically less than 1 A 20h will output Manufacturer code (20h). Address bits and A16, A17, A18 within the uniform block to be checked, will output the IH M29W040 7th Cyc. until Program completes. Block Additional 2AAAh (7) ...

Page 6

... M29W040 Memory Blocks The memory blocks of the M29W040 are shown in Figure 3. The memory array is divided in 8 uniform blocks of 64 Kbytes. Each block can be erased separately or any combination of blocks can be erased simultaneously. The Block Erase operation is managed automaticallyby the P/E.C. The opera- tion can be suspended in order to read from any other block, and then resumed ...

Page 7

... A16-A18 has been suc- cessfullyunprotected.All combinations of A16-A18 must be addressed in order to ensure that all of the will end the IH 8 uniform blocks have been unprotected. Block Protection Status is shown in Table 5. while A6 and M29W040 TOP BOTTOM ADDRESS 7FFFFh 70000h 6FFFFh 60000h ...

Page 8

... M29W040 Table 8. Status Register DQ Name Logic Level ’1’ Data ’0’ 7 Polling DQ DQ ’-1-0-1-0-1-0-1-’ ’-0-0-0-0-0-0-0-’ 6 Toggle Bit ’-1-1-1-1-1-1-1-’ ’1’ 5 Error Bit ’0’ ’1’ 4 ’0’ ’1’ Erase 3 Time Bit ’0’ 2 Reserved 1 Reserved ...

Page 9

... 0.2V CC Byte Program, Block Erase Chip Erase in progress 0.2V CC –0.5 0 2mA –100 A V –0 –2.0mA 0. 11 1.9 M29W040 1N914 3.3k OUT 30pF or 100pF AI01968 Max Unit Max Unit 0 ...

Page 10

... Addresses are latched on the falling edge while data is latched on the rising edge The coded cycles happen on first and second cycles of the command write or on the fourth and fifth cycles. M29W040 -120 Unit V = 3.3V 0.3V ...

Page 11

... Power Down (PD) instruction. The Power Down instruction uses one write cycle to put the memory into a power down mode where current consump- tion is typically reduced to less than 1.0 A. Once in this state, a Reset (RST) command must be written to the P/E.C. prior to any operation. M29W040 M29W040 -200 Unit = 2.7V to 3.6V CC Max Min ...

Page 12

... M29W040 Figure 6. Read Mode AC Waveforms 12/31 ...

Page 13

... After completion the Status Register bit DQ5 returns ’1’ if there has been an Erase Failure because the erasure has not been verified even after the maximum number of erase cycles have been executed. M29W040 -120 Unit V = 3.3V 0.3V CC ...

Page 14

... The status of the internal timer can be monitored through the level of DQ3, if DQ3 is ’0’ the Block Erase Command has been given and the timeout is running, if DQ3 is ’1’, the timeout has expired and the P/E.C is erasing the block(s). 14/31 M29W040 -150 V = 2. Min ...

Page 15

... Bit will stop toggling between 0.1 s and 15 s after the Erase Suspend (ES) command has been writ- ten. The M29W040 will then automatically set to Read Memory Array mode. When erase is suspended, Read from blocks being erased will output invalid data, Read from block not being erased is valid. ...

Page 16

... Read Array. Either must be tied to V during Power-up to allow maximum security and the possibility to write a command on the first rising adge Any write cycle initiation is blocked when V is below LKO 16/31 M29W040 -100 V = 3.3V 0. 30pF L Min Max 100 ...

Page 17

... Note: 1. Time is measured to Data Polling or Toggle Bit, t M29W040 -150 V = 2. Min Max 150 1 WHQV WHQ7V Q7VQV M29W040 -200 Unit = 2.7V to 3.6V CC Min Max 200 ...

Page 18

... M29W040 Figure 8. Write AC Waveforms, E Controlled A0-A18 tAVEL W tWLEL G tGHEL E DQ0-DQ7 V CC tVCHWL Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. 18/31 WRITE CYCLE VALID tELAX tEHWH tEHGL tELEH tEHEL tDVEH tEHDX VALID AI01366B ...

Page 19

... Erase) Chip Enable High to Output Valid t EHQV1 (Program) Chip Enable High to Output Valid t EHQV2 (Block Erase) Notes: 1. All other timings are defined in Read AC Characteristics table the Program or Erase time. WHQ7V M29W040 (1) M29W040 -100 -120 V = 3.3V 0. 3.3V 0. 30pF L Min Max Min ...

Page 20

... Chip Enable High to Output Valid t EHQV1 (Program) Chip Enable High to Output Valid t EHQV2 (Block Erase) Notes: 1. All other timings are defined in Read AC Characteristics table the Program or Erase time. WHQ7V 20/31 (1) M29W040 -150 -200 V = 2. 2. Min Max Min Max ...

Page 21

... Figure 9. Data Polling DQ7 AC Waveforms M29W040 21/31 ...

Page 22

... 2.7V to 3.6V Parameter Chip Program (Byte) Chip Erase (Preprogrammed) Chip Erase Block Erase (Preprogrammed) Block Erase Byte Program Program/Erase Cycles (per Block) 22/31 Figure 11. Data Toggle Flowchart NO PASS AI01369 M29W040 Min Typ 2.5 8.5 1.5 12 100,000 START READ DQ5 & DQ6 DQ6 NO = TOGGLE YES DQ5 ...

Page 23

... Figure 12. Data Toggle DQ6 AC Waveforms M29W040 23/31 ...

Page 24

... M29W040 Figure 13. Block Protection Flowchart READ DQ0 at PROTECTION ADDRESS: A0 and A16, A17, A18 DEFINING BLOCK 24/31 START BLOCK ADDRESS on A16, A17, A18 Wait Wait 100 Wait DQ0 = 1 YES ...

Page 25

... Wait Wait Wait 10ms Wait 4 s READ at UNPROTECTION ADDRESS: A1 and A16, A17, A18 DEFINING BLOCK (see Note 1) NO YES DATA = 00h M29W040 INCREMENT BLOCK LAST NO SECT. YES PASS AI01371E 25/31 ...

Page 26

... Note: 1. This speed is obtained with a supply voltage range of V M29W040 is replaced by the new version M29W040B Device are shipped from the factory with the memory content erased (to FFh). For a list of available options(Speed, Package,etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you ...

Page 27

... 0.51 (.020) 1.14 (.045) R M29W040 inches Min Max 0.100 0.140 0.060 0.095 – 0.015 0.013 0.021 0.026 0.032 0.485 0.495 0.447 0.455 0.390 0.430 0.585 0.595 0.547 0.555 0.490 0.530 – – 0.000 0.010 – ...

Page 28

... M29W040 TSOP32 Normal Pinout - 32 lead Plastic Thin Small Outline 20mm Symb Typ A A1 0.05 A2 0.95 B 0.15 C 0.10 D 19.80 D1 18.30 E 7.90 e 0. DIE TSOP-a Drawing is not to scale. 28/31 mm Min Max Typ 1.20 0.15 1.05 0.27 0.21 20.20 18.50 8. 0.020 0. 0. inches Min Max 0.047 0.002 0.007 0.037 0.041 ...

Page 29

... D DIE TSOP-b Drawing is not to scale. mm Min Max Typ 1.20 0.17 1.05 0.27 0.21 20.20 18.50 8.10 – – 0.020 0. 0. M29W040 inches Min Max 0.047 0.002 0.006 0.037 0.041 0.006 0.011 0.004 0.008 0.780 0.795 0.720 0.728 0.311 0.319 – – 0.020 0.028 0.004 ...

Page 30

... M29W040 TSOP32 - 32 lead Plastic Thin Small Outline 14mm Symb Typ A A1 0.05 A2 0.95 B 0.17 C 0.10 D 13.80 D1 12.30 E 7.90 e 0. DIE TSOP-a Drawing is not to scale. 30/31 mm Min Max Typ 1.20 0.15 1.05 0.27 0.21 14.20 12.50 8. 0.020 0. 0. inches Min Max 0.047 0.002 0.006 0.037 0.041 0.007 0.011 ...

Page 31

... All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 1999 STMicroelectronics - All Rights Reserved http://www.st.com M29W040 31/31 ...

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