SPB80N03S2L-03 SMD Infineon Technologies, SPB80N03S2L-03 SMD Datasheet

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... IEC climatic category; DIN IEC 68-1 Preliminary data product (FOM) DS(on) Ordering Code Symbol puls E AS dv/dt =175°C jmax tot Page 1 SPP80N03S2L-03 SPB80N03S2L-03 Product Summary 2.8 max. SMD version DS(on P-TO263-3-2 P-TO220-3-1 Marking 2N03L03 2N03L03 Value 80 80 320 810 6 ±20 300 -55... +175 ...

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... Diagrams are related to straight lead versions Preliminary data Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = V V GS(th DSS I GSS R DS(on DS(on) = 0.5 K/W the chip is able to carry I thJC Page 2 SPP80N03S2L-03 SPB80N03S2L-03 Values Unit min. typ. max 0.5 K Values Unit min. typ. max 1.2 1.6 2 µ ...

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... =80A (plateau =25° =0V, I =80A =15V /dt=100A/µ Page 3 SPP80N03S2L-03 SPB80N03S2L-03 Values min. typ. max. 93 185 - , - 6100 7600 pF - 2360 2950 - 555 830 - 2 11.8 17.7 - 105 158 - 99 148 - 90 135 - 18 ...

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... K 36.0µ 100 µ Page 4 SPP80N03S2L-03 SPB80N03S2L- SPP80N03S2L- 100 120 140 160 ) SPP80N03S2L-03 single pulse - 2001-04-05 °C 190 ...

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... Typ. forward transconductance = f(I g DS(on)max fs parameter: g 250 S 200 175 150 125 100 3 Page 5 SPP80N03S2L-03 SPB80N03S2L- SPP80N03S2L- [ 3.3 3.5 3.8 4.0 4.5 10 100 120 ) ...

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... Typ. gate threshold voltage V GS(th parameter: V 140 °C 100 200 Forward character. of reverse diode parameter iss oss rss Page 6 SPP80N03S2L-03 SPB80N03S2L- 1. 250 µA 1 0.5 0 -60 - 100 ) µ SPP80N03S2L- ...

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... Preliminary data 14 Typ. gate charge = parameter 125 145 °C 185 T j 100 140 °C 200 T j Page 7 SPP80N03S2L-03 SPB80N03S2L-03 ) Gate = 80 A pulsed D SPP80N03S2L- 0 max 0 max 120 160 200 260 nC ...

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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Preliminary data Page 8 SPP80N03S2L-03 SPB80N03S2L-03 2001-04-05 ...