STG8210 SamHop Microelectronics Corp., STG8210 Datasheet - Page 2

• Manufacturer Part Number: STG8210
• Description: Dual N-Channel E nhancement Mode Field Effect Transistor
• Manufacturer: SamHop Microelectronics Corp.

E LE CTR ICAL CHAR ACTE R IS TICS (T
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHAR ACTE R IS TICS
Output Capacitance
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
Gate-Drain Charge
OFF CHAR ACTE R IS TICS
Drain-S ource On-S tate R esistance
Input Capacitance
Turn-Off Delay Time
Total Gate Charge
Gate-S ource Charge
R everse Transfer Capacitance
R ise Time
Fall Time
Parameter
b
c
c
S ymbol
R
V
BV
t
t
D(OFF)
C
C
I
I
DS (ON)
C
GS (th)
D(ON)
Q
g
Q
DS S
GS S
Q
OS S
R S S
t
t
FS
IS S
DS S
r
f
gs
gd
g
A
=
2
V
V
V
V
V
V
V
V
I
V
R
R
V
V
V
25 C unless otherwise noted)
f =1.0MH
D
GS
DS
GS
GS
DS
GS
DS
DS
DD
GE N
DS
GS
L
GE N
= 1A,
= 10
Condition
=
=
=
=
=
=
=8V, V
=
= 10V,
=10V, I
=4.0V
0V, I
V
= 10
16V, V
4.0V, I
2.5V, I
= 4.0V,
5V, I
GS
10V,V
ohm
, I
Z
D
ohm
D
GS
D
D
=
D
D
GS
= 250uA
=
250uA
= 5A,
DS
=
= 0V
=
5A
=
5A
3A
=
0V
0V
Min Typ Max Unit
20
0.5
11.5
16.5
11.2
40.2
19.1
999
234
144
0.7
2.4
7.6
23
12
4
C
1.5
20
28
10
1
m ohm
m ohm
uA
uA
nC
nC
nC
P
P
ns
ns
ns
P
ns
V
S
V
F
F
F