STG8210 SamHop Microelectronics Corp., STG8210 Datasheet - Page 3

• Manufacturer Part Number: STG8210
• Description: Dual N-Channel E nhancement Mode Field Effect Transistor
• Manufacturer: SamHop Microelectronics Corp.

S T G 8210
E LE CTR ICAL CHAR ACTE R IS TICS (T
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Parameter
1500
1200
900
600
300
16
12
20
8
4
0
0
F igure 1. Output C haracteris tics
0
0
C rs s
V
V
V
G S
DS
DS
F igure 3. C apacitance
4
1
=4.5,4,3V
, Drain-to S ource Voltage (V )
, Drain-to-S ource Voltage (V )
2
8
12
3
16
4
S ymbol
V
V
G S
G S
20
V
=2.5V
5
=2V
C os s
C is s
S D
24
A
=25 C unless otherwise noted)
6
b
V
GS
3
Condition
F igure 4. On-R es is tance Variation with
= 0V, Is =1.7A
2.2
1.8
1.4
1.0
0.6
0.2
15
12
0
0.0
9
6
3
0
-50
F igure 2. Trans fer C haracteris tics
V
G S
I
D
-25
=4.0V
=5A
V
0.5
G S
Temperature
25 C
, G ate-to-S ource Voltage (V )
125 C
0
1.0
25
1.5
Min Typ Max Unit
50
2.0
T j=-55 C
75
0.8
100
2.5
T j( C )
C
125
3.0
1.2
V