IXDD430 IXYS Corporation, IXDD430 Datasheet - Page 3

no-image

IXDD430

Manufacturer Part Number
IXDD430
Description
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
Manufacturer
IXYS Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXDD430YI
Manufacturer:
SANYO
Quantity:
6 238
Absolute Maximum Ratings
Electrical Characteristics
Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
Unless otherwise noted, T
All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions.
Specifications Subject To Change Without Notice
Parameter
Supply Voltage
All Other Pins
Power Dissipation, T
Derating Factors (to Ambient)
Storage Temperature
Lead Temperature (10 sec)
S ym bol
V
V
V
I
V
V
R
R
I
I
V
V
V
R
V
V
V
R
t
t
t
t
t
t
V
I
IN
PEA K
D C
R
F
O ND LY
O F FD LY
E NO H
D O LD
C C
IH
IL
IN
O H
O L
EN
EN H
EN L
INV
INVH
INVL
C C
O H
O L
EN
IN V
TO220 (CI), TO263 (YI)
TO220 (CI), TO263 (YI)
Param eter
High input v oltage
Low input v oltage
Input v oltage range
Input current
High output v oltage
Low output v oltage
O utput resistance
@ O utput high
O utput resistance
@ O utput Low
Peak output current
Continuous output
current
Enable v oltage range
High E n Input V oltage
Low En Input V oltage
EN Input R esistance
INV Voltage Range
High IN V Input Voltage
Low IN V Input V oltage
INV Input R esistance
Rise tim e
Fall tim e
O n-tim e propagation
delay
Off-tim e propagation
delay
Enable to output high
delay tim e
Disable to output low
delay tim e
Power supply v oltage
Power supply current
AMBIENT
A
= 25
≤25 o C
o
C, 8.5V ≤ V
Value
40 V
-0.3 V to V CC + 0.3 V
2W
0.016W/ o C
-65 o C to 150 o C
300 o C
(Note 1)
CC
≤ 35V .
T est C onditio n s
4.5V ≤ V
4.5V ≤ V
0V ≤ V
V
V
V
Lim ited by package power
dissipation
IXD D430 O nly
IXD D430 O nly
IXD D430 O nly
IXD S430 O nly
IXD S430 O nly
IXD S430 O nly
IXD S430 O nly
IXD S430 O nly
C
C
C
C
IXD D430 O nly, Vcc=18V
IXD D430 O nly, Vcc=18V
V
V
V
C C
C C
C C
IN
IN
IN
L
L
L
L
= 5600pF V cc= 18V
= 5600pF V cc= 18V
= 5600pF V cc= 18V
= 5600pF V cc= 18V
= + V
= 3.5V
= 0V
= 18V
= 18V
= 18V
IN
C C
C C
≤ V
C C
≤ 18V
≤ 18V
C C
3
Operating Ratings
P a ra m e te r
M a xim um Junction T em perature
O pera ting T em perature R ange
T herm al Im pedance T O 220 (C I), TO 263 (Y I)
θ
θ
T herm al Im pedance 28 pin S O IC w ith H eat S lug (S I)
θ
JC
JA
JC
(Ju nction T o C ase)
(Ju nction T o A m bien t)
(Ju nction T o C ase)
IXDN430 / IXDI430 / IXDD430 / IXDS430
V
C C
2/3 V cc
2/3 V cc
- 0.3
- 0.3
M in
- 0.025
-10
3.5
8.5
-5
T yp
400
400
0.3
0.2
30
18
16
41
35
18
1
0
V a lu e
150 o C
-55 o C to 125 o C
0.95 o C /W
62.5 o C /W
3 o C /W
Vcc + 0.3
Vcc + 0.3
V
1/3 V cc
1/3 V cc
C C
0.025
M ax
120
0.8
0.4
0.3
10
20
18
45
39
47
35
10
10
8
3
+ 0.3
K ohm
K ohm
U nits
m A
µA
µA
µA
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
V
V
V
V
V
V
V

Related parts for IXDD430